AM3401

AM3401 AXELITE | Alldatasheet

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Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401 P-Ch 30V Fast Switching MOSFETs  GENERAL DESCRIPTION The AM3401 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The AM3401 meet the RoHS and Green Product requirement, with full function reliability approved.  FEATURES - Advanced high cell density Trench technology - Super Low Gate Charge - Excellent CdV/dt effect decline - Green Device Available - RoHS and Halogen free compliance. Product Summery SOT23-3L Pin configuration BVDSS RDS(ON) ID -30V 52mΩ -3.3A

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401  ORDER/MARKING INFORMATION Order Information Top Marking Package Type AM3401 Packing Blank : Bag X X R: SOT23-3L A : Taping B AM3401 WW:01~26 (A~Z) 27~52 (a~z) Year: 8=2018 9=2019 B=2020 C=2021 D=2022 ID code:internal BY WX Z=2044  ABSOLUTE MAXIMUM RATINGS (at TA = 25°C) Characteristics Symbol Rating Unit 10s Steady State Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS @ -10V (Note1) ID@TA=25°C -3.8 -3.3 A Continuous Drain Current, VGS @ -10V (Note1) ID@TA=70°C -3.1 -2.7 A Pulsed Drain Current (Note2) IDM -17 A Total Power Dissipation (Note3) PD@TA=25°C 1.32 1 W Total Power Dissipation (Note3) PD@TA=70°C 0.84 0.64 W Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. Note 2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% Note 3: The power dissipation is limited by 150°C junction temperature  Thermal Data Characteristics Symbol Min Typ Max Units Thermal Resistance Junction-Ambient (Note1) RθJA - - 125 °C/W Thermal Resistance Junction-Ambient (Note1) (t ≤10s) RθJA - - 95 °C/W Thermal Resistance Junction-Case (Note1) RθJC - - 80 °C/W Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 - - V BVDSS Temperature Coefficient △BVDSS/△TJ Reference to Static Drain-Source On-Resistance2 RDS(ON) VGS=-10V , ID=-3A - 42 52 mΩ VGS=-4.5V , ID=-2A - 75 90 Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V VGS(th) Temperature Coefficient △VGS(th) - 4 - mV/°C Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V , TJ=25°C - - -1 uA VDS=-24V , VGS=0V , TJ=55°C - - -5 Gate-Source Leakage Current IGSS VGS=±20V , VDS=0V - - ±100 nA Forward Transconductance gfs VDS=-5V , ID=-3A - 11 - S Total Gate Charge (-4.5V) Qg VDS=-15V , VGS=-4.5V , ID=-3A - 6.4 9.0 nC Gate-Source Charge Qgs - 2.3 3.2 Gate-Drain Charge Qgd - 1.9 2.7 Turn-On Delay Time Td(on) VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-3A - 2.8 5.6 ns Rise Time Tr - 8.4 15.1 Turn-Off Delay Time Td(off) - 39 78.0 Fall Time Tf - 6 12.0 Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz - 583 816 pF Output Capacitance Coss - 100 140 Reverse Transfer Capacitance Crss - 80 112

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401  Diode Characteristics Characteristics Symbol Conditions Min Typ Max Units Continuous Source Current (Note1,3) IS VG=VD=0V , Force Current - - -3.3 A Pulsed Source Current (Note2,3) ISM - - -17 A Diode Forward Voltage(Note2) VSD VGS=0V , IS=-1A , TJ=25°C - - -1 V Reverse Recovery Time trr IF=-3A, dI/dt=100A/μs , TJ=25°C - 7.8 - nS Reverse Recovery Charge Qrr - 2.5 - nC Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. Note 2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% Note 3: The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401  TYPICAL CHARACTERISTICS Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs TJ

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401  TYPICAL CHARACTERISTICS (CONTINUOUS) Fig.7 Capacitance Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.6 Aug.30, 2019 AM3401  PACKAGE OUTLINES Symbol Dimensions in Millimeters Dimensions in Inches E 0.85 - 1.20 0.033 - 0.047 F 0.00 - 0.10 0.000 - 0.004 H 0.10 - 0.20 0.004 - 0.008 θ 0O 4O 8O 0O 4O 8O JEDEC outline: NA