AM9435 AXELITE | Alldatasheet

Document overview

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Technical content

‹ -30V/-5.2A, R DS(ON) 60mΩ@V GS = -10V ‹ -30V/-4.0A, R DS(ON) 90mΩ@V GS = -4.5V ‹ Super high density cell design for extremely low R DS(ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ Full RoHS compliance ‹ SOP-8 package design

APPLICATIONS

‹ Power Management in Note book ‹ Portable Equipment ‹ Battery Powered System ‹ DC/DC Converter ‹ Load Switch ‹ DSC ‹ LCD Display inverter

DESCRIPTION

The AM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION S S S GD D D D Top View SOP-8 G D S SS DD D TOP VIEW SOP-8 P-Channel -30V P-Channel Enhancement Mode MOSFET AM9435 Rev.1.1 May 19, 2016 Axelite Confidential Materials, do not copy or distribute without written consent.

ORDERING INFORMATION

AM9435S-A S SOP-8 2500 /Tape&Reel Year Code : 00 ~ 99※ ※ Week Code : 01~52 ※ SOP-8 : Only available in tape and reel packaging. (A reel contains 2500 devices) ABSOLUTE MAXIMUM RATINGS A = 25 Unless otherwise noted ) Symbol Parameter Typical Unit V DSS Drain-Source Voltage -30 V V GSS Gate-Source Voltage ±20 V I D Continuous Drain Current (T J =150 ) V GS = -10V -5.2 A I DM Pulsed Drain Current -20 A I S Continuous Source Current (Diode Conduction) -2.4 A T J Operation Junction Temperature -55~150 T STG Storage Temperature Range -55~150 P D Power Dissipation T A =25 T A =70 2.8 1.8 W R θJA Thermal Resistance-Junction to Ambient 70 ℃/W Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. AM9435X - X YY: Year Code WW: Week Code A: Process Code AM9435 YYWWA MARKING Packing Package Package S : SOP-8 Packing Blank : Tube A : Taping AM9435 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016

ELECTRICAL CHARACTERISTICS

A = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V (BR)DSS Drain-Source Breakdown Voltage V GS =0V,I D =-250μA -30 V V GS(th) Gate Threshold Voltage V DS GS D I GSS Gate Leakage Current V DS =0V,V GS =±20V ±100 nA I DSS Zero Gate Voltage Drain Current V DS =-30V,V GS =0V -1 μA V DS =-30V,V GS =0V T J =55 I D(ON) On-State Drain Current V DS 5V,V GS ≦-10V -25 A R DS(ON) Drain-source On-Resistance V GS =-10V,I D =-5.2A V GS =-4.5V, I D =-4.0A mΩ G fs Forward Transconductance V DS =-10V,I D =-5.2A 10 S Source-Drain Doide Is Diode forward Current (Max.) 2.6 A V SD Diode Forward Voltage I S =-2.0A,V GS =0V -0.8 -1.2 V Dynamic Parameters Q g Total Gate Charge V DS =-15V,V GS =-10V I D =-5.0A 15 10 nC Q gs Gate-Source Charge 4.0 Q gd Gate-Drain Charge 2.0 C iss Input Capacitance V DS =-15V,V GS =0V f =1MHz 680 pF C oss Output Capacitance 120 C rss Reverse Transfer Capacitance 75 t d(on) Turn-On Time V DD =-15V,R L =15Ω I D =-1.0A,V GEN =-10V R G =6Ω 7.0 15 nS t r 10 20 t d(off) Turn-Off Time 40 80 t f 20 40 Note : 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding AM9435 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016

(25℃ Unless Note) AM9435 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016

(25℃ Unless Note) AM9435 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 May 19, 2016