AM6012S AXELITE | Alldatasheet
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Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 Apr.29, 2019 AM6012S N-Ch 100V Fast Switching MOSFETs GENERAL DESCRIPTION The AM6012 is the high cell density trenched N -ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. FEATURES - 100% EAS Guaranteed Low RDS(ON) Low Gate Charge RoHs and Halogen-Free Compliant Product Summary BVDSS RDSON ID 100V 12mΩ 11.5A SOP8 Pin Configuration
Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 Apr.29, 2019 AM6012S ORDER/MARKING INFORMATION Order Information Top Marking Package Type S: SOP-8L AM6012 X X Packing A : Taping Blank : Tube AM6 Logo Part number ID code: internal WW: 01~52 Year: 10=2010 11=2011 Y Y W WX 0 1 2 19=2019 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current1 11.5 A ID@TA=70℃ Continuous Drain Current1 9 A IDM Pulsed Drain Current2 46 A EAS Single Pulse Avalanche Energy3 12 mJ IAS Avalanche Current 9 A PD@TA=25℃ Total Power Dissipation4 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1(t≦10s) --- 40 ℃/W Thermal Resistance Junction-Ambient 1 --- 75 ℃/W RθJC Thermal Resistance Junction-Case1 --- 24 ℃/W
Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 Apr.29, 2019 AM6012S Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=11.5A --- 9 12 Static Drain-Source On-Resistance2 VGS=4.5V , ID=9.5A --- 12 15.5 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.3 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=11.5A --- 45 --- S Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=11.5A --- 35 --- nC Qg Total Gate Charge (4.5V) --- 16 --- Qgs Gate-Source Charge --- 8 --- Qgd Gate-Drain Charge --- 4 --- Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3, ID=11.5A --- 9 --- ns Tr Rise Time --- 4.5 --- Td(off) Turn-Off Delay Time --- 35 --- Tf Fall Time --- 5.5 --- Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 2550 --- pF Coss Output Capacitance --- 305 --- Crss Reverse Transfer Capacitance --- 12 --- Diode Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 4 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.1 V trr Reverse Recovery Time IF=11.5A , di/dt=100A/µs , TJ=25℃ --- 28 --- nS Qrr Reverse Recovery Charge --- 120 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.3mH,IAS=9A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 Apr.29, 2019 AM6012S Typical Characteristics
Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 Apr.29, 2019 AM6012S
Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.0 Apr.29, 2019 AM6012S PACKAGE OUTLINES