AM4499P-T1-PF

AM4499P-T1-PF VBSEMI | Alldatasheet

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P-Channel 60-V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  100 % UIS T ested

APPLICATIONS

 Load Switch Notes: a. Based on TC = 25 °C. b. Surface mou nted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) - 60 0.0195 at VGS = - 10 V - 10 76 nC0.0250 at VGS = - 4.5 V - 9 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise not ed) Parameter Symbol Limit Unit Drain-Source Voltag e VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 10a A TC = 70 °C - 9 TA = 25 °C 8b TA = 70 °C - 8 b Pulsed Drain Current IDM - 50 Avalanche Current Pulse L = 0.1 mH IAS - 45 Single Pulse Avalanche Energy EAS 101 mJ Continuous Source-Drain Diode Curren t TC = 25 °C IS 69a ATA = 25 °C 2.1b Maximum Pow er Dissipation TC = 25 °C PD 104.2a W TC = 70 °C 66.7a TA = 25 °C 3.1b TA = 70 °C 2b Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim u m Unit Maximum Junction-to-Ambientb Steady State RthJA 33 40 °C/W Maximum Junction-to-Case S teady State RthJC 0.98 1.2 SO-8 SD SD SD GD 5 Top View AM4499P-T1-PF www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

Notes: a. P ulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless oth erwise noted) Parameter Sy mbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA 68 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 5.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µAVDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS =-5 V, VGS = - 10 V - 120 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A 0.0160 VGS = - 4.5 V, ID = - 20 A 0.0200 Forward Transconductancea gfs VDS = - 15 V, ID = - 50 A 20 S Dynamicb Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 3500 pFOutput Capacitance Coss 390 Reverse Transfe r Capacitance Crss 290 Total Gate Charge Qg VDS = - 30 V, VGS = - 10 V, ID = - 55 A 76 115 nCVDS = - 30 V, VGS = - 4.5 V, ID = - 55 A 38 60 Gate-Sou rce Charge Qgs 16 Gate-Drain Charge Qgd 19 Gate Resistan ce Rg f = 1 MHz 5.2  Tur n-On Delay Time td(on) VDD = - 2 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  10 15 ns Rise Time tr 71 5 Turn-Off Delay Ti me td(off) 70 110 Fall Time tf 40 60 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 69 A Pulse Diode F orward Currenta ISM - 150 Body Diode Voltage VSD IS = - 30 A - 1 - 1.5 V Body Diode Reverse Recov ery Time trr IF = - 50 A, di/dt = 100 A/µs, TJ = 25 °C 45 68 ns Body Diode Reverse Reco very Charge Qrr 59 120 nC Reverse Reco very Fall Time ta 29 ns Reverse Recovery Rise Ti me tb 16 AM4499P-T1-PF www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transfer Ch aracteristics On-Resistance vs. Drain Current VGS =5V 120 160 200 0 12345 VDS - Drain-to-SourceVoltage (V) ID - Drain Current (A) VGS =1 0t h ru 6 V VGS =4 V VGS =3 V 0 12345 VGS - Gate-to-So urce Voltage (V) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 0.005 0.015 0.025 0.035 0.045 0.055 02 0 4 0 6 0 80 100 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V Transfer Characteristics Trans conductance Capacitance 100 0 12345 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 100 01 2 2 4 3 6 4 8 60 ID - Drain Current (A) gfs - Transconductance (S) TC = 125 °C TC = - 55 °C TC = 25 °C Crss 1000 2000 3000 4000 5000 0 1 02 03 04 05 06 0 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss AM4499P-T1-PF www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless o therwise noted) Gate Charge Source-Drain Dio de Forward Voltage Single Pulse Avalanche Current Capability vs. Time ID =5 5A 02 0 4 0 6 0 80 VGS - Gate-to-Sou rce Voltage (V) Qg - Total Gate Charge (nC) VDS =3 0V VDS =2 0V TJ = 150 °C VSD - Source-to-Drain Voltage ( IS - Source Current (A) 100 TJ = 25 °C 0.0001 1000 0.1 - (A) IDav Tin - (s) 0.001 0.01 0.1 100 IAV (A) at TJ = 25 °C IAV (A) at TJ = 150 °C On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Gate-to-So urce Voltage Drain-Source Breakdown Voltage vs. Junction Temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized)RDS(on) - On-Resistance ID = 20 A VGS =4 . 5V VGS =1 0V 0.00 0.02 0.04 0.06 0.08 0.10 0246 8 10 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 150 °C ID =2 0A - 50 - 25 0 25 50 75 100 125 150 ID = 10 mA V(BR)DSS - (V) TJ - Temperature (°C) AM4499P-T1-PF www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Threshold Voltage Power D erating, Junction-to-Case - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature(°C) ID =1m A 100 120 140 0 25 50 75 100 125 150 TJ - Temperature (°C) Power (W) Max. Drain Current vs. Case Temperatu re Safe Operating Area, Junction-to-Case 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) VDS - Drain-to-Sou rce Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified 1000 0.1 1 10 100 0.1 100 - Drain Current (A)I D TC = 25 °C Single Pulse 100 µs 10 ms 100 ms, DC Limited byR DS(on)* BVDSS Limited 10 µs 1m s Normalized Thermal Transien t Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 S quare WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 10-4 10-3 10-2 10-1 1 0.05 0.02 Single Pulse 0.1 AM4499P-T1-PF www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0 .19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S AM4499P-T1-PF www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

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