AM2394NE

AM2394NE VBSEMI | Alldatasheet

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N-Channel 100 V (D-S) MOSFET

FEATURES

• T r e n ch F E T® Power MOSFET  100 % R g Tested  100 % UIS Tested Material categorization:

APPLICATIONS

 DC/DC Converters  Load Sw itch LED Backlighting in LCD TVs Notes: Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) 100 0.240 at VGS = 10 V 2.0 2.9 nC0. at V GS = 6 V 1.8 0. at VGS = 4.5 V 1.7 G S D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless oth erwise noted) Paramete r Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 1.8 TA = 25 °C 1.6b, c TA = 70 °C 1.3b, c Pulsed Drain Current (t = 300 µs) IDM 7 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1.0b, c Single Pulse Avala nche Current L = 0.1 mH IAS 5 Single Pulse Avala nche Energy EAS 1.25 mJ Maximum Powe r Dissipation TC = 25 °C PD 2.5 WTC = 70 °C 1.6 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temper ature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim um Unit Maximum Junction-to-Ambientb, d 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 250 260 AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

Notes: a. P ulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS (TJ = 25 °C, un less otherwise noted) Parameter Symbol T est Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 105 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 5.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.8 V Gate-S ource Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - 1 µAVDS = 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 5A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 1.5 A VGS = 6 V, ID = 1 A VGS = 4.5 V, ID = 0.5 A 0. 0 Forward Transconductancea gfs VDS = 20 V, ID = 1.5 A 2.0 S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 190 pFOutput Capacitance Coss 22 Reverse Transfe r Capacitance Crss 13 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 1.6 A 5.2 10.4 nCVDS = 50 V, VGS = 4.5 V, ID = 1.6 A 2.9 5.8 Gate-Source Charge Qgs 0.75 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 0.3 1.4 2.8  Turn -On Delay Time td(on) VDD = 50 V, RL = 39  ID = 1.3 A, VGEN = 4.5 V, Rg = 1  30 45 ns Rise Time tr 26 39 Turn-Off Delay T ime td(off) 17 26 Fall Ti me tf 12 20 Tur n-O n Delay Time td(on) VDD = 50 V, RL = 39  ID = 1.3 A, VGEN = 10 V, Rg = 1  61 2 Rise Time tr 10 20 Turn-Off Delay T ime td(off) 10 20 Fall Ti me tf 61 2 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.1 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = 1.3 A - 0.8 - 1.2 V Body Diode Reverse Recov ery Time trr IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recov ery Charge Qrr 21 32 nC Reve rse Recovery Fall Time ta 16 ns Reverse Recovery Rise Time tb 6 0.240 0.250 AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless o therwise noted) Output Charac teristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 00 .511 .52 ID - Drain Current (A) VDS - Drain-t o-Source Voltage (V) VGS = 10 V thru 5 V VGS = 3 V VGS = 4.5V 0.1 0.200 0.300 012345 RDS(on) - On-Resistance (Ω) ID - Drain Curr ent (A) VGS = 6 V VGS = 4.5 V VGS = 10 V 0 1.5 3 4.5 6 VGS - Gate-to-Source Volt age (V) Qg - Total Gate Charge (nC) VDS = 80 V VDS = 25 V VDS = 50 V ID = 1.6 A Transfer Ch aracteristics Capacitance On-Resistance vs. Junction Temperature 0.6 1.2 1.8 2.4 01234 ID - Drain Current (A) VGS - Gate-to-Source Volt age (V) TC = 25 °C TC = - 55 °C TC = 125 °C 120 180 240 300 0 2 04 06 08 0 1 0 0 C - Capacitance (pF) VDS - Drain-t o-Source Voltage (V) Ciss Coss Crss 0.4 0.85 1.3 1.75 2.2 - 50 - 25 0 25 50 75 100 125 150 RDS(on) -O n - R e si s t a n c e (Normalized) TJ - Junction Temperature (°C) ID = 1.5 A VGS = 6 V VGS = 10 V 250 0.350 AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless other wise noted) Source-Drain Diode Forw ard Voltage Threshold Voltage 0.1 IS - Source Current (A) VSD - Source-to-Drai n Voltage (V) TJ = 150 °C TJ = 25 °C 1.6 1.9 2.2 2.5 2.8 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T e m p e r a t u r e (°C) ID = 250 μA On-Resistance vs. Gate-to-Sourc e Voltage Single Pulse Power 0.15 0.2 0.3 0.4 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Volt age (V) TJ = 125 °C T = 25 °C ID = 1.5 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA = 25 °C Safe Operating Area 0.001 0.01 0.1 0.1 1 10 100 1000 ID - Drain Curr ent (A) VDS - Drain-to-S ource Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 μs 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Puls e BVDSS Limit ed 10 ms 1 s, 10 s DC AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power d i ssipation PD is based on TJ(max) = 150 °C, using ju nction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.7 1.4 2.1 2.8 0 25 50 75 100 125 150 ID - Drain Current (A TC - Case Temperature (°C) Power, Junction-to-Foot 0.6 1.2 1.8 2.4 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Power (W) TC - Case Temperature (°C) Power, Junc tion-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Power (W) TA - Ambient Temperature (°C) AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

Normalized Thermal Transient Impedance, Junction-t o-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per U nit Base = RthJA =1 6 6 ° C/W TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Therm al Transient Impedance, Junction-to-Foot 10-3 10-2 10110-110-4 0.2 0.1 Duty Cycle = 0. Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 A = 25 °C, unless otherwise noted) Note

• The characteri stics shown in the two gr aphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for g eneral guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal im pedance charac teristics which are de veloped fr om empirical m easurements. The la tter is va lid for the part mounted on printed circuit board - FR 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely v ary depending on actual application parameters and operating conditions. AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03 946-Rev. K, 09-Jul-01 DWG: 5479 AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT- 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to Index AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. AM2394NE www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 A ll data sheet.com