AM2321P-T1-PF VBSEMI | Alldatasheet

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P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A)a Qg (Typ.) - 20 0.035 at VGS = - 10 V - 5e 10 nC0.043 at VGS = - 4.5 V - 5 e 0.061 at VGS = - 2.5 V - 4.8 G TO-236 (SOT-23) S D Notes: a. Based on TC = 25 °C. b. Surfac e mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximu m under steady state conditions is 166 °C/W. e. Package limited. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 5e A TC = 70 °C - 4.8 TA = 25 °C - 4.5b, c TA = 70 °C - 3.5b, c Pulsed Drain Current IDM - 18 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.1 TA = 25 °C - 1.0b, c Maximum Power Dissipation TC = 25 °C PD 2.5 WTC = 70 °C 1.6 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximu m Uni t Maximum Junction-to-Ambientb, d 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain ) Steady State RthJF 40 50

FEATURES

 Halogen-free According to IEC 61249-2-2 Definition  TrenchFET ® Power MOSFET  100 % R g Tested  Compliant to RoHS Directive 2002/9 5/EC

APPLICATIONS

 Load Switch  PA Switch  DC/DC Conve r ters www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

Notes: a. Pulse test; pulse w idth  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Ab solute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET SPECIFICATIONS (TJ = 25 °C, unless oth erwise noted) Parameter Symbol Test Cond itions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 13.4 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 2.9 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µAVDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 18 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 5.1 A 0.035 VGS = - 2.5 V, ID = - 3.7 A 0.061 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.1 A 15 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 835 pFOutput Capacitance Coss 180 Reverse Transfer Capacitance Crss 155 Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A 10 nCVDS = - 10 V, VGS = - 2.5 V, ID = - 5.1 A 6.4 Gate-Source Charge Qgs 1.7 Gate-Drain Charge Qgd 3.4 Gate Resistance Rg f = 1 MHz 0.9 4.4 8.8  Tur n- On Delay Time td(on) VDD = - 10 V, RL = 2.4  ID = - 4.1 A, VGEN = - 4.5 V, Rg = 1  22 33 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 28 42 Fall Time tf 91 8 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.1 A Pulse Diode F orward Currenta ISM - 20 Body Diode Voltage VSD IS = - 4.1 A - 0.8 - 1.2 V Body Diode Reverse Recove ry Time trr IF = - 4.1 A, dI/dt = 100 A/ µs, TJ = 25 °C 23 35 ns Body Diode Reverse Reco very Charge Qrr 12 20 nC Reverse Recov ery Fall Time ta 15 ns Reverse Recovery Rise T ime tb 8 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Output Charac teristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 00 .511 .52 ID - Drain Current (A) VDS - Drain-to -Source Voltage (V) VGS = 5 V thru 3 V VGS = 1.5 V VGS = 2.5 V VGS = 2 V 0.00 0.02 0.04 0.06 0.08 0 5 10 15 20 RDS(on) - On-Resistance (Ω) ID -D rain Cur r e n t ( A ) VGS = 2.5 V VGS = 4.5 V VGS = 10 V 0369 12 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC VDS = 16 V VDS = 10 V ID = 5.1 A VDS = 5 V Transfer Characteristics Capacitance On-Resistance vs. Junctio n Temperature 0 0.5 1 1.5 2 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C TC = 25 °C 350 700 1050 1400 0 5 10 15 20 C - Capacitance (pF VDS - Drain-to-Source Voltage (V) Ciss CossCrss 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 RDS(on) -O n - R e s is t a n c e (Normalized) TJ - Junction Temperature (°C) VGS = 10 V VGS = 4.5 V www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Fo rward Voltage Threshold Voltage 0.1 IS - Source Current (A) VSD - Source-to-Drain Vol tage (V) TJ = 150 °C TJ = 25 °C 0.5 0.7 0.8 1.0 1.1 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T emperat u r e (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Po wer 0.02 0.04 0.06 0.08 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 5.1 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA = 25 °C Safe Operating Area 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s, 10 s DC www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) * The power dissipa tion PD is b ased on TJ(max) = 15 0 °C, using juncti on-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Package Limited Power, Junction-to-Foo t 0.5 1.5 2.5 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Power (W) TC - Case Temperature (°C) Power, Juncti on-to-Ambient 0.2 0.4 0.6 0.8 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Power (W) TA - Ambient Temperature (°C) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impe dance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal I mpedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =1 6 6 ° C /W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0. Single Pulse 0.02 0.05 Normalized Thermal Transient Imp edance, Junction-to-Foot 10-3 10-2 10110-110-4 0.2 0.1 Duty Cycle = 0.5 Squ are WaveP ulse Duration (s) Normalized Effective Transient Thermal I mpedance 0.1 0.01 0.05 Single Pulse 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2 .10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-R ev. K, 09-Jul-01 DWG: 5479 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to IndexReturn to Inde x www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com

r All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBse mi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AM2321P-T1-PF A ll data sheet.com