ACR300SG33 DYNEX | Alldatasheet
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www.dynexsemi.com ACR300SG33ACR300SG33ACR300SG33ACR300SG33ACR300SG33
APPLICATIONS
n Pulse Power Applications
FEATURES
n The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on characteristics. VOLTAGE RATINGS KEY PARAMETERS VDRM 3300V IT(AV) 660A ITSM 6500A dVdt 3000V/µs dI/dt 2000A/µs ton 700ns 3300ACR300SG33 Repetitive Peak Reverse Voltage VRRM V Lower voltage grades available. Type Number Repetitive Peak Off-state Voltage VDRM V Fig. 1 See Package Details for further information CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current UnitsMax. Half wave resistive load, Tcase = 80oC 660 A Tcase = 80oC 1040 A Tcase = 80oC 890 A Half wave resistive load, Tcase = 80oC 470 A Tcase = 80oC 745 A Tcase = 80oC 570 A ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 Outline type code: G.
www.dynexsemi.com ACR300SG33ACR300SG33ACR300SG33ACR300SG33ACR300SG33 SURGE RATINGS Conditions Max. UnitsSymbol Parameter ITSM Surge (non-repetitive) on-state current I2tI 2t for fusing 180 kA 2s 6k A THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W- 0.070Anode dc Clamping force 7.0kN with mounting compoundThermal resistance - case to heatsinkR th(c-h) 0.018Double side - 125 oC Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side Thermal resistance - junction to caseR th(j-c) Single side cooled Symbol Parameter Clamping force 6.0 8.0 kN -55 125 oC On-state (conducting) - 150 oC - 0.036 oC/W oC/W Cathode dc - 0.092 oC/W Double side cooled - 0.042 oC/W 10ms half sine; Tcase = 125oC VR = 0 Fig.1 Turn-on time measurement VD IG 0.9 x 1600V 0.37 x 1600V t td tr IG pk 10% IG pk t
www.dynexsemi.com ACR300SG33ACR300SG33ACR300SG33ACR300SG33ACR300SG33 GATE TRIGGER CHARACTERISTICS AND RATINGS VDWM = 12V, RL = 6Ω , Tcase = 25oC Typ. Max. UnitsConditionsParameterSymbol VGT Gate trigger voltage V DWM = 12V, RL = 6Ω , Tcase = 25oC IGT Gate trigger current -5V - 500 mA VFGM Peak forward gate voltage - -4 0V VRGM Peak reverse gate voltage IFGM Peak forward gate current - PGM Peak gate power - -1 0 V -2 0 A -4 0 W -1 0 W ForwardAverage time 10ms maxPG(AV) Average gate power DYNAMIC CHARACTERISTICS VTM ParameterSymbol Conditions Maximum on-state voltage At 1000A peak, T case = 25oC IRRM /IDRM Peak reverse and off-state current At V RRM /VDRM , Tcase = 125oC From VDRM to 125A Gate source 30V, 10Ω Gate rise time = 100ns, Tj = 125˚C dV/dt Linear rate of rise of off-state voltage To VD = 2000V, Gate open circuit, Tj = 125oC Min. Max. Units - 2.0 V -6 0 m A 3000 - V/ µs - 2000 A/ µsRate of rise of on-state currentdI/dt VT(TO) Threshold voltage At T vj = 125oC rT On-state slope resistance At T vj = 125oC Latching current 1.19-V - 0.81 m Ω VD = 5V, Tj = 25˚CIL - 600 mA IH Holding current I TM = 500A, IT = 5A, Tj = 25˚C td Delay time VD = 3000V Gate source = 30V, 10Ω Gate rise time = 100ns - 300 mA - 350 ns See Fig.1. Tj = 25 - 70˚C. ns50-Rise timetr -- n s Tj = 25˚C Tj = 70˚C CURRENT CARRYING CAPABILITY AFTER CHIP SHORT CIRCUIT In the event of a chip short-circuit due to excess anode-cathode voltage, the device will handle a high continuous RMS fault current without significant damage. Rating details are as follows: Continuous current capability: 300A RMS, ac or dc in either direction. Conditions: 1. Device single or double side cooled. 2. Case temperature to be held at 200˚C or less. 3. A suitable high temperature clamp to be used. 4. Chip fault site resistance assumed to be 3mΩ ± 10%.
www.dynexsemi.com ACR300SG33ACR300SG33ACR300SG33ACR300SG33ACR300SG33 CURVES 500 1000 1500 2000 2500 3000 3500 0 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous voltage, VT - (V) Instantaneous current, IT - (A) Tj = 125˚C Fig.2 On-state characteristics Fig.3 Transient thermal impedance - junction to case 80Thermal impedance - junction to case, Rth(j-c) - ˚C/kW 0.001 0.01 0.1 1 10 100 Time - (s) Anode side cooled Double side cooled Fig.4 Average current rating vs temperature 25 50 75 100 125 150 Case temperature, Tc - (˚C) 1000 900 800 700 600 500 400 300 200
100 Average current, IT(AV) - (A)
www.dynexsemi.com ACR300SG33ACR300SG33ACR300SG33ACR300SG33ACR300SG33 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Ø34 nom 27.0 25.4 Ø1.5 Cathode Gate AnodeØ34 nom Ø58.5 max Nominal weight: 310g Clamping force: 12kN –10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: G Cathode tab
www.dynexsemi.com ACR300SG33ACR300SG33ACR300SG33ACR300SG33ACR300SG33 CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 58 04 91 07 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 58 04 91 07 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5081-2 Issue No.3.4 August 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre- loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 22mm and ‘E’ 30mm discs, and bar clapms right up to 83kN fo our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.