ACR2900VR45

ACR2900VR45 DYNEX | Alldatasheet

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Technical content

DS6188-2 August 2016 (LN33710) www.dynexsemi.com

FEATURES

 Double Side Cooling  High Surge Capability  Very Low Cosmic Ray FIT Rating  High dv/dt Rating

APPLICATIONS

 Multi-level VSC By-pass thyristor for HVDC VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions ACR2900VR45 Tvj = -40°C to 125°C, IDRM = IRRM = 400mA, VDRM, VRRM tp = 10ms,

ORDERING INFORMATION

For example: ACR2900VR45 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. KEY PARAMETERS VDRM 1000V VRRM 4500V IT(AV) 2900A ITSM 39000A dV/dt 10kV/µs dI/dt 400A/µs Outline type code: V (See Package Details for further information) Fig. 1 Package outline

www.dynexsemi.com CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IT(AV) Mean on-state current Half wave resistive load 2900 A IT(RMS) RMS value - 4555 A IT Continuous (direct) on-state current - 4420 A SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125°C 39 kA I2t I2t for fusing VR = 0 7.6 MA2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.00746 °C/W Single side cooled Anode DC - 0.0130 °C/W Cathode DC - 0.0178 °C/W Rth(c-h) Thermal resistance – case to heatsink Clamping force 54kN Double side - 0.002 °C/W (with mounting compound) Single side - 0.004 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 48.0 59.0 kN

www.dynexsemi.com DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 400 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 60°C, gate open - 10000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Gate source 30V, 10, Non-repetitive - 400 A/µs tr < 0.5µs, Tj = 125°C VT(TO) Threshold voltage – Low level 300A to 2400A at Tcase = 125°C - 0.82 V Threshold voltage – High level 2400A to 9000A at Tcase = 125°C - 1.065 V rT On-state slope resistance – Low level 300A to 2400A at Tcase = 125°C - 0.3059 m On-state slope resistance – High level 2400A to 9000A at Tcase = 125°C - 0.2039 m tgd Delay time VD = 67% VDRM,Ig= 3A, 3 3 µs tr = 0.5µs, Tj = 25°C, tp = 40µs DC FITs DC Cosmic Ray FIT Rating Tj = 25°C, VR = 50% VRRM ,sea level 22 Per 109 Tj = 25°C, VR = 67% VRRM ,sea level 728 hours Vpu Pick-up Voltage Ig= 3A, tr = 0.5µs, Tj = 25°C, tp = 40µs 2 V IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA

www.dynexsemi.com GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES Fig.2 Maximum & minimum on-state characteristics Fig.3 Cosmic Ray DC FIT Rating VTM EQUATION Where A = 0.035542 B = 0.131586 VTM = A + B.ln (IT) + C.IT+D.IT C = 0.000179 D = 0.000591 these values are valid for Tj = 125°C for IT 300A to 9000 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.00 1.00 2.00 3.00 Instantaneous on-state current IT - (A) Instantaneous on-state voltage VT - (V) 125°C 75°C 25°C 100 200 300 400 500 600 700 800 FITs - (/109 hrs) DC Voltage (%Vrrm) Conditions: Tj = 25°C, sea level

www.dynexsemi.com Fig.4 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 0.001 0.1 10 Thermal Impedance , Z th(j-c) - ( °C/kW) Time ( s ) Double Side Cooling Anode Side Cooling Cathode Sided Cooling 1 2 3 4 Double side cooled Ri (°C/kW) 0.9206 1.8299 3.4022 1.3044 Ti (s) 0.0076807 0.0579454 0.4078613 1.2085 Anode side cooled Ri (°C/kW) 0.9032 1.6719 3.0101 7.4269 Ti (s) 0.0075871 0.0536531 0.3144537 5.624 Cathode side cooled Ri (°C/kW) 0.9478 2.0661 1.6884 13.0847 Ti (s) 0.0078442 0.0645541 0.3894389 4.1447 Zth =  [Ri x ( 1-exp. (t/ti))] [1] Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Anode Side Cooling Cathode Sided Cooling Zth (z) Zth (z) Zth (z)

www.dynexsemi.com Fig5 Gate Characteristics Fig. 6 Gate characteristics 0 1 2 3 4 5 6 7 8 9 10 Gate trigger voltage, VGT - (V) Gate trigger current, IGT - (A) Lower Limit Upper Limit 10W 20W 50W 100W 150W -40C

www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device Maximum Thickness (mm) Minimum Thickness (mm) ACR2900VR45 27.67 26.92 ACR3200VR33 27.48 26.73 ACR3350VR45 27.44 26.69 ACR3775VR33 27.34 26.59 Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Weight 1100g Fig.7 Package outline

www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning r equirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document a nd is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. The products must not be touched when operating because there is a danger of electro cution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric cha rge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme condition s, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate ap plication design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Provisional Information: Some initial development work has been performed. The datasheet represents a view of the end product based on very limited information. Certain details will change. Preliminary Information: The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com CUSTOMER SERVICE Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: power_solutions@dynexsemi.com  Dynex Semiconductor Ltd. Technical Documentation – Not for resale.