9926 GOFORD | Alldatasheet

Document overview

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Technical content

Description

The 9926 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply Schematic diagram Marking and pin Assignment SOP-8 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous I D 6 A Drain Current-Continuous(T C =100℃) I D (100℃) 3.8 A Pulsed Drain Current I DM 25 A Maximum Power Dissipation P D 1.25 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) R θJA 100 /W℃ 9926 GOFORD VDSS RDS(ON) 16 A 4.5V @ (Typ) Ωm20V RDS(ON) 2.5V (Typ) @ Ωm ID RoHS Compliant

Ordering Information

9926 SOP-8

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 22 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 1.2 V V GS =4.5V, I D - 16 25 Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =4A - 20 30 mΩ Forward Transconductance g FS V DS =5V,I D =6A 20 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 640 - PF Output Capacitance C oss - 140 - PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz - 80 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8 - nS Turn-on Rise Time t r - 9 - nS Turn-Off Delay Time t d(off) - 15 - nS Turn-Off Fall Time t f V DD =10V,I D =1A V GEN =4.5V,R G =6Ω - 4 - nS Total Gate Charge Q g - 10 - nC Gate-Source Charge Q gs - 1.5 - nC Gate-Drain Charge Q gd V DS =10V,I D =3A, V GS =4.5V - 1.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.7A - - 1.15 V Diode Forward Current (Note 2) I S - - 6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production =4.5A =±8V, V GOFORD 9926 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

1) E AS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： GOFORD 9926 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

A B C E F D DIM A B C D E MIN NOM MAX 6.000 6.2005.800 4.900 5.0004.800 1.270BSC 0.35 ^ 8x 3.780 0.203 0.253 - 0.150 0.2500.050 1.450 1.5501.350 1.600 1.7001.500

1.060 REF

0.40 ^ 8x 0.45 ^ 8x 3.880 3.980 F 0.700 0.1000.400 0.250BSC e ee All Dimensions in mm GOFORD 9926 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466