93C66 | DigiCamel IC Datasheet

Online Datasheet

Read 93C66 online.

93C66 SYC | Alldatasheet

Document overview

Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
PDF pages: 22

Technical content

Low-Power CMOS Technology
ORG Pin to Select Word Size for ‘66C’ Version
512 x 8-bit Organization ‘A’ Devices (no ORG)
256 x 16-bit organization ‘B’ Devices (no ORG)
Self-tImed Erase/Write Cycles (including Auto-Erase)
Automatic Erase All (ERAL) Before Write All (WRAL)
Power-On/Off Data Protection Circuitry
Industry Standard 3-Wire Serial I/O
Device Status Signal (Ready/ Busy)
Sequential Read Function
1,000,000 Erase/Write Cycles
Data Retention > 200 Years
Pb-free and RoHS Compliant
Temperature Ranges Supported: Pin Function Table Description: The Microchip Technology Inc. 93XX66A/B/C devices are 4Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA66C, 93LC66C or 93C66C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit communication, the 93XX66A devices are available, while the 93XX66B devices provide dedicated 16-bit communication. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications. The entire 93XX Series is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. All packages are Pb-free (Matte Tin) finish. Part Number V CC Range ORG Pin Word Size Temp Ranges Packages 93AA66A 1.8-5.5 No 8-bit I P, SN, ST, MS, OT, MC 93AA66B 1.8-5-5 No 16-bit I P, SN, ST, MS, OT, MC 93LC66A 2.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC 93LC66B 2.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC 93C66A 4.5-5.5 No 8-bit I, E P, SN, ST, MS, OT, MC 93C66B 4.5-5.5 No 16-bit I, E P, SN, ST, MS, OT, MC 93AA66C 1.8-5.5 Yes 8- or 16-bit I P, SN, ST, MS, MC 93LC66C 2.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC 93C66C 4.5-5.5 Yes 8- or 16-bit I, E P, SN, ST, MS, MC - Industrial (I) -40°C to +85°C - Automotive (E) -40°C to +125°C Name Function CS Chip Select CLK Serial Data Clock DI Serial Data Input DO Serial Data Output V SS Ground NC No internal connection ORG Memory Configuration V CC Power Supply 4K Microwire Compatible Serial EEPROM

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C DS21795D-page 2 © 2008 Microchip Technology Inc. Package Types (not to scale) CS CLK DI DO VCC NC ORG* VSS PDIP/SOIC (P , SN) CS CLK DI DO V CC NC ORG* VSS ROTATED SOIC (ex: 93LC46BX) TSSOP/MSOP CS CLK DI DO VCC NC ORG* VSS (ST, MS) SOT-23 DO VSS DI VCC CS CLK (OT) *ORG pin is NC on A/B devices. DFN CS CLK DI DO NC ORG* VSS VCC8 (MC)

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings(†) TABLE 1-1: DC CHARACTERISTICS † NOTICE: Stresses above those listed under “Absolute Maxi mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. All parameters apply over the specified ranges unless otherwise noted. Industrial (I): T A = -40°C to +85°C, VCC = +1.8V to +5.5V Automotive (E): T A = -40°C to +125°C, VCC = +2.5V to +5.5V Param. No. Symbol Parameter Min Typ Max Units Conditions D1 V IH1 VIH2 High-level input voltage 2.0

0.7 VCC

V CC +1 VCC +1 V V VCC ≥ 2.7V VCC < 2.7V D2 V IL1 VIL2 Low-level input voltage -0.3 -0.3 0.8

0.2 VCC

V V V CC ≥ 2.7V VCC < 2.7V D3 V OL1 VOL2 Low-level output voltage — 0.4 0.2 V V IOL = 2.1 mA, VCC = 4.5V IOL = 100 μA, VCC = 2.5V D4 V OH1 VOH2 High-level output voltage 2.4 VCC - 0.2 V V IOH = -400 μA, VCC = 4.5V IOH = -100 μA, VCC = 2.5V D5 I LI Input leakage current — — ±1 μAV IN = VSS or VCC D6 I LO Output leakage current — — ±1 μAV OUT = VSS or VCC D7 C IN, COUT Pin capacitance (all inputs/ outputs) ——7 p F V IN/VOUT = 0V (Note 1) TA = 25°C, FCLK = 1 MHz D8 I CC write Write current — 500 mA μA FCLK = 3 MHz, Vcc = 5.5V FCLK = 2 MHz, Vcc = 2.5V D9 I CC read Read current — 100 500 mA μA μA FCLK = 3 MHz, VCC = 5.5V FCLK = 2 MHz, VCC = 3.0V FCLK = 2 MHz, VCC = 2.5V D10 I CCS Standby current — μA μA I – Temp E – Temp CLK = Cs = 0V ORG = DI = V SS or VCC (Note 2) (Note 3) D11 V POR VCC voltage detect 93AA66A/B/C, 93LC66A/B/C 93C66A/B/C 1.5V 3.8V V V (Note 1) Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG pin not available on ‘A’ or ‘B’ versions. 3: Ready/Busy status must be cleared from DO; see Section 3.4 "Data Out (DO)".

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C DS21795D-page 4 © 2008 Microchip Technology Inc. TABLE 1-2: AC CHARACTERISTICS All parameters apply over the specified ranges unless otherwise noted. Industrial (I): T A = -40°C to +85°C, VCC = +1.8V to +5.5V Automotive (E): T A = -40°C to +125°C, VCC = +2.5V to +5.5V Param. No. Symbol Parameter Min Max Units Conditions A1 F CLK Clock frequency — 3 MHz MHz MHz 4.5V ≤ VCC < 5.5V, 93XX66C only 2.5V ≤ VCC < 5.5V 1.8V ≤ VCC < 2.5V A2 T CKH Clock high time 200 250 450 —n s ns ns 4.5V ≤ VCC < 5.5V, 93XX66C only 2.5V ≤ VCC < 5.5V 1.8V ≤ VCC < 2.5V A3 T CKL Clock low time 100 200 450 —n s ns ns 4.5V ≤ VCC < 5.5V, 93XX66C only 2.5V ≤ VCC < 5.5V 1.8V ≤ VCC < 2.5V A4 T CSS Chip Select setup time 50 100 250 —n s ns ns 4.5V ≤ VCC < 5.5V 2.5V ≤ VCC < 4.5V 1.8V ≤ VCC < 2.5V A5 T CSH Chip Select hold time 0 — ns 1.8V ≤ VCC < 5.5V A6 T CSL Chip Select low time 250 — ns 1.8V ≤ VCC < 5.5V A7 T DIS Data input setup time 50 100 250 —n s ns ns 4.5V ≤ V CC < 5.5V, 93XX66C only 2.5V ≤ VCC < 5.5V 1.8V ≤ VCC < 2.5V A8 T DIH Data input hold time 50 100 250 —n s ns ns 4.5V ≤ V CC < 5.5V, 93XX66C only 2.5V ≤ VCC < 5.5V 1.8V ≤ VCC < 2.5V A9 T PD Data output delay time — 200 250 400 ns ns ns 4.5V ≤ V CC < 5.5V, CL = 100 pF 2.5V ≤ VCC < 4.5V, CL = 100 pF 1.8V ≤ VCC < 2.5V, CL = 100 pF A10 T CZ Data output disable time — 100 200 ns ns 4.5V ≤ VCC < 5.5V, (Note 1) 1.8V ≤ VCC < 4.5V, (Note 1) A11 T SV Status valid time — 200 300 500 ns ns ns 4.5V ≤ VCC < 5.5V, CL = 100 pF 2.5V ≤ VCC < 4.5V, CL = 100 pF 1.8V ≤ VCC < 2.5V, CL = 100 pF A12 T WC Program cycle time — 6 ms Eras e/Write mode (AA and LC versions) A13 T WC — 2 ms Erase/Write mode (93C versions) A14 T EC — 6 ms ERAL mode, 4.5V ≤ VCC ≤ 5.5V A15 T WL — 15 ms WRAL mode, 4.5V ≤ VCC ≤ 5.5V A16 — Endurance 1M — cycles 25°C, V CC = 5.0V, (Note 2) Note 1: This parameter is periodically sampled and not 100% tested. 2: This application is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance™ Mode l, which may be obtained from Microchip’s web site at www.microchip.com.

© 2008 Microchip Technology Inc. DS21795D-page 5 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C FIGURE 1-1: SYNCHRONOUS DATA TIMING TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZA TION (93XX66B OR 93XX66C WITH ORG = 1) TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX66A OR 93XX66C WITH ORG = 0) Instruction SB Opcode Address Data In Data Out Req. CLK Cycles ERASE 1 11 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/ BSY)1 1 ERAL 1 00 10XXXXXX —( R D Y / BSY)1 1 EWDS 1 00 00XXXXXX — High-Z 11 EWEN 1 00 11XXXXXX — High-Z 11 READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0 — D15 – D0 27 WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15 – D0 (RDY/ BSY)2 7 WRAL 1 00 01XXXXXX D15 – D0 (RDY/ BSY)2 7 Instruction SB Opcode Address Data In Data Out Req. CLK Cycles ERASE 1 11 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/ BSY)1 2 ERAL 1 00 10XXXXXXX — (RDY/ BSY)1 2 EWDS 1 00 00XXXXXXX — High-Z 12 EWEN 1 00 11XXXXXXX — High-Z 12 READ 1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 – D0 20 WRITE 1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 – D0 (RDY/ BSY)2 0 WRAL 1 00 01XXXXXXX D7 – D0 (RDY/ BSY)2 0 CS VIH VIL VIH VIL VIH VIL VOH VOL VOH VOL CLK DI DO (Read) DO (Program) TCSS TDIS TCKH TCKL TDIH TPD TCSH TPD TCZ Status Valid TSV TCZ Note: TSV is relative to CS.

2.0 FUNCTIONAL DESCRIPTION

When the ORG pin is connected to VCC, the (x16) orga- nization is selected. When it is connected to ground, the (x8) organization is selected. Instructions, addresses and write data are clocked into the DI pin on the rising edge of the clock (CLK). The DO pin is normally held in a High-Z state except when reading data from the device, or when checking the Ready/ Busy status during a programming operation. The Ready/Busy status can be verified during an Erase/ Write operation by polling the DO pin; DO low indicates that programming is still in progress, while DO high indicates the device is ready. DO will enter the High-Z state on the falling edge of CS.

2.1 Start Condition

The Start bit is detected by the device if CS and DI are both high with respect to t he positive edge of CLK for the first time. Before a Start condition is detected, CS, CLK and DI may change in any combination (except to that of a Start condition), without resulting in any device operation (Read, Write, Er ase, EWEN, EWDS, ERAL or WRAL). As soon as CS is high, the device is no longer in Standby mode. An instruction following a Start condition will only be executed if the required opcode, address and data bits for any particular instruction are clocked in.

2.2 Data In/Data Out (DI/DO)

It is possible to connect the Data In and Data Out pins together. However, with this configuration it is possible for a “bus conflict” to occur during the “dummy zero” that precedes the read opera tion, if A0 is a logic high level. Under such a condition the voltage level seen at Data Out is undefined and will depend upon the relative impedances of Data Out and the signal source driving A0. The higher the current sourcing capability of A0, the higher the voltage at the Data Out pin. In order to limit this current, a resistor should be connected between DI and DO.

2.3 Data Protection

All modes of operation are inhibited when VCC is below a typical voltage of 1.5V for ‘93AA’ and ‘93LC’ devices or 3.8V for ‘93C’ devices. The EWEN and EWDS commands give additional protection against accidentally programming during normal operation. Note: For added protection, an EWDS command should be performed after every write operation. After power-up, the device is automatically in the EWDS mode. Therefore, an EWEN instruction must be performed before the initial ERASE or WRITE instruction can be executed. Block DiagramNote: When preparing to transmit an instruction, either the CLK or DI signal levels must be at a logic low as CS is toggled active high. Memory Array Data Register Mode Decode Logic Clock Register Address Decoder Address Counter Output Buffer DO DI ORG* CS CLK VCC VSS *ORG input is not available on A/B devices

2.4 Erase

The ERASE instruction forces all data bits of the speci- fied address to the logical ‘1’ state. CS is brought low following the loading of the last address bit. This falling edge of the CS pin initia tes the self-timed program- ming cycle, except on ‘93C’ devices where the rising edge of CLK before the last address bit initiates the write cycle. The DO pin indicates the Ready/ Busy status of the device if CS is brought high after a minimum of 250 ns low (T CSL). DO at logical ‘0’ indicates that programming is still in progress. DO at logical ‘ 1’ indicates that the register at the specified address has been erased and the device is ready for another instruction. Note: Issuing a Start bit and then taking CS low will clear the Ready/ Busy status from DO. FIGURE 2-1: ERASE TIMING FOR 93AA AND 93LC DEVICES FIGURE 2-2: ERASE TIMING FOR 93C DEVICES CS CLK DI DO TCSL Check Status 11 1 AN AN-1 AN-2 ••• A0 TSV TCZ Busy Ready High-Z TWC High-Z CS CLK DI DO TCSL Check Status

111 AN AN-1 A N-2 ••• A0

2.5 Erase All (ERAL)

The Erase All ( ERAL) instruction will erase the entire memory array to the logical ‘1’ state. The ERAL cycle is identical to the erase cycle, except for the different opcode. The ERAL cycle is completely self-timed and commences at the falling edge of the CS, except on ‘93C’ devices where the rising edge of CLK before the last data bit initiates the write cycle. Clocking of the CLK pin is not necessary after the device has entered the ERAL cycle. The DO pin indicates the Ready/ Busy status of the device, if CS is brought high after a minimum of 250 ns low (T CSL). Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. VCC must be ≥ 4.5V for proper operation of ERAL. FIGURE 2-3: ERAL TIMING FOR 93AA AND 93LC DEVICES FIGURE 2-4: ERAL TIMING FOR 93C DEVICES CS CLK DI DO TCSL Check Status 10 01 0x ••• x TSV TCZ Busy Ready High-Z TEC High-Z VCC must be ≥4.5V for proper operation of ERAL. CS CLK DI DO TCSL Check Status 10 01 0x ••• x TSV TCZ Busy Ready High-Z TEC High-Z

2.6 Erase/Write Disable and Enable

(EWDS/EWEN) The 93XX66A/B/C powers up in the Erase/Write Disable (EWDS) state. All Programming modes must be preceded by an Erase/Write Enable (EWEN) instruction. Once the EWEN instruction is executed, programming remains enabled until an EWDS instruction is executed or Vcc is removed from the device. To protect against accidental data disturbance, the EWDS instruction can be used to disable all erase/write functions and should follow all programming opera- tions. Execution of a READ instruction is independent of both the EWEN and EWDS instructions. FIGURE 2-5: EWDS TIMING FIGURE 2-6: EWEN TIMING

2.7 Read

The READ instruction outputs the serial data of the addressed memory location on the DO pin. A dummy zero bit precedes the 8-bit (If ORG pin is low or A-Version devices) or 16-bit (If ORG pin is high or B-version devices) output string. The output data bits will toggle on the rising edge of the CLK and are stable after the specified time delay (T PD). Sequential read is possible when CS is held high. The memory data will automatically cycle to the next register and output sequentially. FIGURE 2-7: READ TIMING CS CLK DI 10 00 0x ••• x TCSL CS CLK DI 001 1x TCSL

•• CS CLK DI DO 11 0 An ••• A0

2.8 Write

The WRITE instruction is followed by 8 bits (If ORG is low or A-version devices) or 16 bits (If ORG pin is high or B-version devices) of data which are written into the specified address. For 93AA66A/B/C and 93LC66A/B/C devices, after the last data bit is clocked into DI, the falling edge of CS initiates the self-timed auto-erase and programming cycle. For 93C66A/B/C devices, the self- timed auto-erase and programming cycle is initiated by the rising edge of CLK on the last data bit. The DO pin indicates the Ready/ Busy status of the device, if CS is brought high after a minimum of 250 ns low (T CSL). DO at logical ‘0’ indicates that programming is still in progress. DO at logical ‘ 1’ indicates that the register at the specified address has been written with the data specified and the de vice is ready for another instruction. Note: Issuing a Start bit and then taking CS low will clear the Ready/ Busy status from DO. FIGURE 2-8: WRITE TIMING FOR 93AA AND 93LC DEVICES FIGURE 2-9: WRITE TIMING FOR 93C DEVICES CS CLK DI DO Busy Ready High-Z High-Z TWC TCSL TCZTSV CS CLK DI DO Busy Ready High-Z High-Z TWC TCSL TCZTSV

2.9 Write All (WRAL)

The Write All ( WRAL) instruction will write the entire memory array with the data specified in the command. For 93AA66A/B/C and 93LC66A/B/C devices, after the last data bit is clocked into DI, the falling edge of CS initiates the self-timed auto-erase and programming cycle. For 93C66A/B/C devices, the self-timed auto- erase and programming cycle is initiated by the rising edge of CLK on the last data bit. Clocking of the CLK pin is not necessary after the device has entered the WRAL cycle. The WRAL command does include an automatic ERAL cycle for t he device. Therefore, the WRAL instruction does not require an ERAL instruction, but the chip must be in the EWEN status. The DO pin indicates the Ready/ Busy status of the device if CS is brought high after a minimum of 250 ns low (T CSL). Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO. VCC must be ≥ 4.5V for proper operation of WRAL. FIGURE 2-10: WRAL TIMING FOR 93AA AND 93LC DEVICES FIGURE 2-11: WRAL TIMING FOR 93C DEVICES CS CLK DI DO HIGH-Z High-Z Busy Ready TWL VCC must be ≥4.5V for proper operation of WRAL. TCSL TSV TCZ CS CLK DI DO HIGH-Z High-Z Busy Ready TWL TCSL TSV TCZ

3.0 PIN DESCRIPTIONS

TABLE 3-1: PIN DESCRIPTIONS

3.1 Chip Select (CS)

A high level selects the device; a low level deselects the device and forces it into Standby mode. However, a programming cycle which is already in progress will be completed, regardless of the Chip Select (CS) input signal. If CS is brought low during a program cycle, the device will go into Standby mode as soon as the programming cycle is completed. CS must be low for 250 ns minimum (T CSL) between consecutive instructions. If CS is low, the internal control logic is held in a Reset status.

3.2 Serial Clock (CLK)

The Serial Clock is used to synchronize the communi- cation between a master device and the 93XX series device. Opcodes, address and data bits are clocked in on the positive edge of CLK. Data bits are also clocked out on the positive edge of CLK. CLK can be stopped anywhere in the transmission sequence (at high or low level) and can be continued anytime with respect to Clock High Time (T CKH) and Clock Low Time (T CKL). This gives the controlling master freedom in preparing opcode, address and data. CLK is a “don’t care” if CS is low (device deselected). If CS is high, but the Start condition has not been detected (DI = 0), any number of clock cycles can be received by the device without changing its status (i.e., waiting for a Start condition). CLK cycles are not required during the self-timed write (i.e., auto erase/write) cycle. After detection of a Start condition the specified number of clock cycles (respectively low-to-high transitions of CLK) must be provided. These clock cycles are required to clock in all required opcode, address and data bits before an instruction is executed. CLK and DI then become “don’t care” inputs waiting for a new Start condition to be detected.

3.3 Data In (DI)

Data In (DI) is used to clock in a Start bit, opcode, address and data synchronously with the CLK input.

3.4 Data Out (DO)

Data Out (DO) is used in the Read mode to output data synchronously with the CLK input (T PD after the posi- tive edge of CLK). This pin also provides Ready/ Busy status information during erase and write cycles. Ready/Busy status infor- mation is available on the DO pin if CS is brought high after being low for minimum Chip Select Low Time CSL) and an erase or write operation has been initiated. The Status signal is not available on DO, if CS is held low during the entire erase or write cycle. In this case, DO is in the High-Z mode. If status is checked after the erase/write cycle, the data line will be high to indicate the device is ready. Note: Issuing a Start bit and then taking CS low will clear the Ready/Busy status from DO.

3.5 Organization (ORG)

When the ORG pin is connected to VCC or Logic HI, the (x16) memory organization is selected. When the ORG pin is tied to V SS or Logic LO, the (x8) memory organization is selected. For proper operation, ORG must be tied to a valid logic level. 93XX66A devices are always (x8) organization and 93XX66B devices are always (x16) organization. Name SOIC/PDIP/ MSOP/TSSOP/ DFN SOT-23 Rotated SOIC Function CS 1 5 3 Chip Select CLK 2 4 4 Serial Clock DI 3 3 5 Data In DO 4 1 6 Data Out V SS 5 2 7 Ground ORG/NC 6 N/A 8 Organization / 93XX66C No Internal Connection / 93XX66A/B NC 7 N/A 1 No Internal Connection VCC 8 6 2 Power Supply

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Example:6-Lead SOT-23 8-Lead MSOP (150 mil) Example: XXXXXXT YWWNNN 3L66BI 5281L7 XXNN 3EL7 T/XXXNNN XXXXXXXX YYWW 8-Lead PDIP 8-Lead SOIC XXXXYYWW XXXXXXXT NNN XXXX TYWW 8-Lead TSSOP NNN I/P 1L7 93LC66B 0528 Example: Example: SN 0528 93LC66BI 1L7 1L7 L66B I528 Example: 8-Lead 2x3 DFN Example: 374 528 XXX YWW NN

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C DS21795D-page 14 © 2008 Microchip Technology Inc. Note: T = Temperature grade (I, E) NN = Alphanumeric traceability code Part Number 1st Line Marking Codes TSSOP MSOP SOT-23 DFN I Temp. E Temp. I Temp. E Temp. 93AA66A A66A 3A66AT 3BNN — 361 — 93AA66B A66B 3A66BT 3LNN — 371 — 93AA66C A66C 3A66CT — — 381 — 93LC66A L66A 3L66AT 3ENN 3FNN 364 365 93LC66B L66B 3L66BT 3PNN 3RNN 374 375 93LC66C L66C 3L66CT — — 384 385 93C66A C66A 3C66AT 3HNN 3JNN 367 368 93C66B C66B 3C66BT 3TNN 3UNN 377 378 93C66C C66C 3C66CT — — 387 388 Legend: XX...X Part number or part number code T Temperature (I, E) Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code (2 characters for small packages) Pb-free JEDEC designator for Matte Tin (Sn) Note: For very small packages with no room for the Pb-free JEDEC designator , the marking will only appear on the outer carton or reel label. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, t hus limiting the number of available characters for customer-specific information.

© 2008 Microchip Technology Inc. DS21795D-page 21 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C /g56/g81/g76/g87/g86/g48/g44/g47/g47/g44/g48/g40/g55/g40/g53/g54 D N E NOTE 1 1 2 EXPOSED PAD NOTE 1 2 1 K L N e b A3 A1 A NOTE 2 BOTTOM VIEWTOP VIEW

Product Information

93C66 specifications and overview.

Summary

4K Microwire Compatible Serial EEPROM

Description

4K Microwire Compatible Serial EEPROM

Source title 93C66 Datasheet(PDF) - SYC Electronica

Related Parts

More parts from the same family.

Browse manufacturer