8N60

8N60 SYC | Alldatasheet

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Technical content

7.5 Amps,600/650 Volts

„ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( C RSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: 8N60L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 8N60-x-TA3-T 8N60L-x-TA3-T TO-220 G D S Tube 8N60-x-TF3-T 8N60L-x-TF3-T TO-220F G D S Tube 8N60 MOSFET N 600V 7.5A 1,2 OHM www.sycelectronica.com.ar

„ ABSOLUTE MAXIMUM RATINGS (TC = 25¥, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 8N60-A 600 V Drain-Source Voltage 8N60-B VDSS 650 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 7.5 A TC = 25°C 7.5 A Continuous Drain Current TC = 100°C ID 4.6 A Pulsed Drain Current(Note 1) I DM 30 A Single Pulsed (Note 2) E AS 230 mJ Avalanche Energy Repetitive (Note 1) E AR 14.7 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation TO-220F PD 48 W Junction Temperature T J +150 Ċ Operating Temperature T OPR -55 ~ +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62.5 °C/W Junction-to-Ambient TO-220F θJA 62.5 °C/W TO-220 0.85 °C/W Junction-to-Case TO-220F θJC 2.6 °C/W „ ELECTRICAL CHARACTERISTICS (TC =25¥, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 8N60-A 600 VDrain-Source Breakdown Voltage 8N60-B BVDSS V GS = 0 V, ID = 250 µA 650 V Drain-Source Leakage Current I DSS V DS = 600 V, VGS = 0 V 10 µA Forward V GS = 30 V, VDS = 0 V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV¶ DSS/¶TJ ID = 250 µA, Referenced to 25°C 0.7 V/ Ċ ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 3.75 A 1.0 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 965 1255 pF Output Capacitance C OSS 105 135 pF Reverse Transfer Capacitance C RSS VDS = 25 V, VGS = 0 V, f = 1MHz 12 16 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 16.5 45 ns Turn-On Rise Time t R 60.5 130 ns Turn-Off Delay Time t D(OFF) 81 170 ns Turn-Off Fall Time t F VDD = 300V, ID = 7.5 A, RG = 25Ω (Note 4, 5) 64.5 140 ns Total Gate Charge Q G 28 36 nC Gate-Source Charge Q GS 4.5 nC Gate-Drain Charge Q GD VDS= 480V,ID= 7.5A, VGS= 10 V (Note 4, 5) 12 nC www.sycelectronica.com.ar

„ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 7.5 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 30 A Reverse Recovery Time t RR 365 ns Reverse Recovery Charge Q RR VGS = 0 V, IS = 7.5 A, dIF/dt = 100 A/µs (Note 4) 3.4 µC Notes: 1. Repetitive Rati ng : Pulse width limited by TJ 2. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.sycelectronica.com.ar

„ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s www.sycelectronica.com.ar

„ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RD 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms www.sycelectronica.com.ar

„ TYPICAL CHARACTERISTICS Drain-Source On-Resistance, RDS(ON) (ohm) Drain Current, ID (A) On-Resistance Variation vs. Drain Current and Gate Voltage 10 15 20 0.1 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) Body Diode Forward Voltage vs. Source Current 150¥ 25¥ Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V Note: TJ=25¥ 1900 0.1 Drain-SourceVoltage, VDS (V) 1700 500 11 0 1500 1300 Capacitance Characteristics (Non-Repetitive) Total Gate Charge, QG (nC) 5 15 25 VDS=120V VDS=300V VDS=480V Gate Charge Characteristics 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. VGS=0V 2. f = 1MHz 1100 900 300 100 Note: ID=8A www.sycelectronica.com.ar

„ TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (¥) -50 50 200100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Junction Temperature, TJ (¥) -50 50 200100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 0.1 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100101 100µs 1000 10msDC Maximum Safe Operating Area Drain Current, ID (A) Case Temperature, TC (¥) 75 100 1255025 Maximum Drain Current vs. Case Temperature Notes: 1. TJ=25¥ 2. TJ=150¥ 3. Single Pulse 150 Operation in This Area is Limited by RDS(on) 100 1ms 100µs 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Notes: 1. ǀJC (t) = 0.85¥/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×ǀJC (t) D=0.5 D=0.2 D=0.1 D=0.05 0.02 0.01 Single pulse www.sycelectronica.com.ar