6703A GOFORD | Alldatasheet

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Technical content

Description

The 6703A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). AEC-Q101 Qualified Application

  • Battery protection
  • Load switch
  • Power management N-Channel P-Channel Marking and pin assignment SOT-23-6L Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Max n-channel Max p-channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V Drain Current-Continuous ID 2.9 -3 A Drain Current-Pulsed (Note 1) IDM 10 -10 A TA=25℃ 1.1 1.1 W Maximum Power Dissipation TA=70℃ PD 0.7 0.7 Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 108 /W℃ Thermal Resistance,Junction-to-Lead RθJL 78 /W℃ 6703AGOFORD N-Channel P-Channel VDSS RDS(ON) 30 A2.9 @4.5V (Typ) mΩ20V RDS(ON) @2.5V (Typ) 37mΩ ID VDSS RDS(ON)

80 A-3

@-4.5V(Typ) mΩ-20V RDS(ON) @-2.5V(Typ) 110mΩ ID

Ordering Information

Part Number Marking PackagingCase 6703A SOT-23-6L 3000pcs/Reel6703

  • RoHS Compliant 6703 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

N-Channel Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=250μA 20 22 - V Zero Gate Voltage Drain Current I DSS V DS=20V,VGS=0V - - 1 μA Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=250μA 0.5 0.85 1.2 V VGS=2.5V, ID=2.5A - 37 59 mΩ Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=2.9A - 30 45 mΩ Forward Transconductance g FS V DS=5V,ID=2.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 300 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance C rss VDS=10V,VGS=0V, F=1.0MHz - 80 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 15 nS Turn-on Rise Time t r - 50 85 nS Turn-Off Delay Time t d(off) - 17 45 nS Turn-Off Fall Time t f VDD=10V,ID=2.9A VGS=4.5V,RGEN=6Ω - 10 20 nS Total Gate Charge Q g - 4.0 10 nC Gate-Source Charge Q gs - 0.65 - nC Gate-Drain Charge Q gd VDS=10V,ID=2.9A, VGS=4.5V - 1.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=2.9A - 0.75 1.2 V Diode Forward Current (Note 2) I S - - 2.9 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 6703AGOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

P-Channel Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS=0V ID=-250μA -20 -24 - V Zero Gate Voltage Drain Current I DSS V DS=-20V,VGS=0V - - -1 μA Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250μA -0.4 -0.7 -1 V VGS=-4.5V, ID=-3A - 80 110 mΩ Drain-Source On-State Resistance R DS(ON) VGS=-2.5V, ID=-2A - 110 140 mΩ Forward Transconductance g FS V DS=-5V,ID=-2.8A - 9.5 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 405 - PF Output Capacitance C oss - 75 - PF Reverse Transfer Capacitance C rss VDS=-10V,VGS=0V, F=1.0MHz - 55 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω - 10 - nS Total Gate Charge Q g - 3.3 12 nC Gate-Source Charge Q gs - 0.7 - nC Gate-Drain Charge Q gd VDS=-10V,ID=-3A, VGS=-2.5V - 1.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS=0V,IS=1.3A - - -1.2 V Diode Forward Current (Note 2) I S - - -1.3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page 6 6703AGOFORD HTTP://www.gofordsemi.com TEL： 0755-29961262 FAX： 0755-29961466

HTTP://www.gofordsemi.com TEL： 0755-29961262 FAX： 0755-29961466