6703 GOFORD | Alldatasheet

Document overview

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Technical content

Description

The 6703 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). General Features Application

  • Battery protection
  • Load switch
  • Power management N-Channel P-Channel Marking and pin assignment SOT-23-6L Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Max n-channel Max p-channel Unit Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS ±12 ±12 V Drain Current-Continuous I D 2.9 -3 A Drain Current-Pulsed (Note 1) I DM 10 -10 A T A =25℃ 1.1 1.1 W Maximum Power Dissipation T A =70℃ P D 0.7 0.7 Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 108 /W℃ Thermal Resistance,Junction-to-Lead R θJL 78 /W℃ 6703 GOFORD N-Channel P-Channel V D S S R D S O N A 2.9 4.5V @ (Typ) Ωm20V R D S O N 2.5V (Typ) @ Ωm I D V D S S R D S O N A -4.5V @ (Typ) Ωm-20V R D S O N -2.5V (Typ) @ 110 Ωm I D

Ordering Information

Part Number Marking Packaging Case 6703 SOT-23-6L 3000pcs/Reel 6703 RoHS Compliant 6703 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

N-Channel Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 22 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 μA Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.85 1.2 V V GS =2.5V, I D =2.5A - 37 59 mΩ Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =2.9A - 30 45 mΩ Forward Transconductance g FS V DS =5V,I D =2.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 300 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz - 80 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 15 nS Turn-on Rise Time t r - 50 85 nS Turn-Off Delay Time t d(off) - 17 45 nS Turn-Off Fall Time t f V DD =10V,I D =2.9A V GS =4.5V,R GEN =6Ω - 10 20 nS Total Gate Charge Q g - 4.0 10 nC Gate-Source Charge Q gs - 0.65 - nC Gate-Drain Charge Q gd V DS =10V,I D =2.9A, V GS =4.5V - 1.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =2.9A - 0.75 1.2 V Diode Forward Current (Note 2) I S - - 2.9 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 6703 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

P-Channel Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 -24 - V Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V - - -1 μA Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -0.4 -0.7 -1 V V GS =-4.5V, I D =-3A - 80 110 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2A - 110 140 mΩ Forward Transconductance g FS V DS =-5V,I D =-2.8A - 9.5 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 405 - PF Output Capacitance C oss - 75 - PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz - 55 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =-10V,I D =-1A V GS =-4.5V,R GEN =10Ω - 10 - nS Total Gate Charge Q g - 3.3 12 nC Gate-Source Charge Q gs - 0.7 - nC Gate-Drain Charge Q gd V DS =-10V,I D =-3A, V GS =-2.5V - 1.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.3A - - -1.2 V Diode Forward Current (Note 2) I S - - -1.3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Page 6 6703 GOFORD HTTP://www.gofordsemi.com T E L 961262 F A X

HTTP://www.gofordsemi.com T E L 961262 F A X