4P03L04

4P03L04 VBSEMI | Alldatasheet

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P-Channel 30 V (D-S) MOSFET

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• Compliant to RoHS Directive 2002 /95/EC PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A)a - 30 0.00 at V GS = - 10 V 0.0 at V GS = - 4.5 V S G D P-Channel MOSFET Notes: a. Package limited. b. Duty cycle  1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Uni t Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - a A TC = 125 °C - 90 Pulsed Drain Current IDM - 280 Avalanche Current IAR - 80 Repetitive Avalanche En ergyb L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25 °C (TO-220AB and TO-263) PD 187d W TA = 25 °C (TO-263)c 3.75 Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Uni t Junction-to-Ambient PCB Mount (TO-263)c RthJA °C/WFree Air (TO-220AB) 62.5 Junct ion-to-Case RthJC 0.8 Available RoHS* COMPLIANT TO-252 SG D Top View 100 - 90 -100 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

Notes: a. Pulse test; pulse wi dth  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) Parameter Symbol Test Conditio ns Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = - 250 µA - 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250 On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 120 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A 0.005 VGS = - 10 V, ID = - 30 A, TJ = 125 °C VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.008 VGS = - 4.5 V, ID = - 20 A 0.007 Forward Transconductancea gfs VDS = - 15 V, ID = - 75 A 20 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 8000 pFOutput Capacitance Coss 1565 Reversen Transfer Capacitance Crss 715 Total Gate Chargec Qg VDS = - 15 V, VGS = - 10 V, ID = - 75 A 160 240 nCGate-Source Chargec Qgs 32 Gate-Drain Chargec Qgd 30 Tur n-On De lay Timec td(on) VDD = - 15 V, RL = 0.2  ID  - 75 A, VGEN = - 10 V, Rg = 2.5  25 40 ns Rise Timec tr 225 360 Turn-Off Delay Timec td(off) 150 240 Fall Timec tf 210 340 Source-Drain Diode Ratings and Ch aracteristicsb (TC = 25 °C) Continuous Current IS - 80 A Pulsed Current ISM - 240 Forward Voltagea VSD IF = - 75 A, VGS = 0 V - 1.2 - 1.5 V Reverse Recove ry Time trr IF = - 75 A, dI/dt = 100 A/µs 55 100 ns Peak Re verse Recovery Current I RM(REC) 2.5 5 A Reverse Recovery Charge Qrr 0.07 0.25 µC 0.006 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Cap acitance 100 150 200 250 02468 1 0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 V thru 6 V 5 V 3 V 4 V ID - Drain Current (A) - Transconductance (S)g fs 125 °C 120 150 0 2 04 06 08 0 1 0 0 25 °C TC = - 55 °C 2000 4000 6000 8000 10 000 12 000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 120 160 200 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 125 °C TC = - 55 °C 0.005 0.010 0.015 0.020 0.025 0.030 0 2 04 06 08 0 1 0 0 1 2 0 ID - Drain Current (A) RDS(on) VGS = 10 V VGS = 4.5 V - On-Resistance () 0 50 100 150 200 250 300 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 15 V ID = 75 A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless o therwise noted) On-Resistance vs. Junction Temp erature Avalanche Current vs. Time 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 (Normalized) - On-Resistance TJ - Junction Temperature (°C) RDS(on) VGS = 10 V ID = 30 A tin (s) 1000 0.00001 0.001 0.1 1 100 (a) IDav 0.010.0001 IAV (A) at TA = 25 °C IAV (A) at TA = 150 °C 0.1 Source-Drain Diod e Forward Voltage Drain Source Breakdown vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 TJ = 25 °C TJ = 150 °C - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (V) VDS ID = 250 µA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

Maximum Avalanche and Drain Current vs. Case Tem perature 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) - Drain Current (A)I D Safe Operating Area 1000 0.1 1 10 100 0.1 100 - Drain Current (A)ID 1 ms 100 µs TC = 25 °C Single Pulse DC 10 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 ms Normalized Thermal Transient Imped ance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10- 4 10- 3 10- 2 10- 1 1 Normalized Effective Transient Ther mal Impedance 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

• Dimension L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MI N. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 4P03L04 TO252 A ll data sheet.com