4N0607 VBSEMI | Alldatasheet

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www.VBsemi.com 4N0607-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET

FEATURES

  • 175°C JunctionTemperature
  • TrenchFET ®PowerMOSFET
  • Materialcategorization: TO-220AB D G S GD S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS(TC= 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VGate-SourceVoltage GS ±20 V TC ContinuousDrain Current (TJ=175 °C)b = 25 °C ID 120 TC A =100 °C 90 IPulsedDrain Current DM 350 IContinuousSourceCurrent (Diode Conduction) S 70a IAvalancheCurrent AS 50 SingleAvalancheEnergy(DutyCycle  1 %) EL= 0.1mH AS 125 mJ TC MaximumPower Dissipation = 25 °C PD 136 WTA= 25°C 3b,8.3b, c TJ, TOperatingJunctionandStorage Temperature Range stg - 55 to175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RMaximumJunction-to-Ambienta thJA 15 18t 10 sec °C/WSteadyState 40 50 RMaximumJunction-to-Case thJC 0.85 1.1 Notes: a.Packagelimited. b.Surfacemountedon 1"x1"FR4board. c.t 10s. PRODUCT SUMMARY VDS 60 V RDS(on)VGS =10 V m5  ID 120 A Configuration Single g

www.VBsemi.com unlessotherwisenoted) Symbol Test Conditions Min. MaxTyp.a . Unit SPECIFICATIONS (TJ=25°C, Parameter Static VDDrain-SourceBreakdownVoltage S VGS=0V,ID=250µA 60 VVDS =VGS,ID=250µVGS(thGateThresholdVoltage ) A 2 4 IGSGate-BodyLeakage S VDS=0V,VGS=±20V ±100 nA VDS=60V,VGS =0 IDSZeroGateVoltageDrainCurrent S V 1 VDS =60V,VGS=0V,TJ=125° µAC 50 VDS =60V,VGS=0V,TJ=175°C 250 ID(onOn-StateDrainCurrentb ) VDS =5V,VGS=10V 60 A VGS =10V,ID=20 RDS(onDrain-SourceOn-StateResistanceb ) A 5 VGS=10V,ID=20A,TJ=125° C 10 VGS=10V,ID=20A,TJ=175°C 15 VGS=7.5V,ID=15A 8 gfForwardTransconductanceb s VDS =15V,ID=20A 60 S Dynamic CisInputCapacitance s 680 VGS =0V,VDS=25V,f=1MHz CosOutputCapacitanc pFe s 570 CrsReverseTransferCapacitance s 325 QTotalGateChargec g 4 VDS=30V,VGS=10V,ID=50A 7 70 nCQgGate-SourceChargec s 10 QgGate-DrainChargec d 12 td(onTurn-OnDelayTimec ) 1 VDD=30V,RL=0.6 ID 50A,VGEN=10V,Rg=2.5 0 20 tRiseTime ns c r 15 25 td(offTurn-OffDelayTimec ) 35 50 tFallTimec f 20 30 Source-Drain Diode Ratings and Characteristics (TC=25°C) ISPulsedCurrent M 350 A VSDiodeForwardVoltage D IF=20A,VGS =0V 1 1.5 V trReverseRecoveryTime r IF=20A,di/dt=100A/µs 45 100 ns g Notes: a. Fordesignaidonly;notsubjecttoproductiontesting. b. Pulsetest;pulsewidth 300µs,dutycycle 2 %. c.Independentofoperatingtemperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.VBsemi.com TYPICAL CHARACTERISTICS(25 °C unless noted) VGS= 10 thru 7 V 6 V 3V, 4V Crss Coss ID Ciss - Drain Current (A)V -Gate-to-Source Voltage(V) 100 100 80 80 60 60 40 40 20 20 0 0 VDS- Drain-to-Source Voltage (V) Output Characteristics VGS- Gate-to-Source Voltage (V) Transfer Characteristics 120 100 0.015 0.012 0.009 0.006 0.003 0 0.000 0 90 100 110 120 1300 10 20 30 40 50 ID- Drain Current (A) Transconductance ID- Drain Current (A) On-Resistance vs. Drain Current 8000 7000 6000 5000 4000 3000 4 2000 1000 0 10 20 30 40 50 60 VDS- Drain-to-Source Voltage (V) Capacitance 0 10 20 30 40 50 Qg- Total Gate Charge (nC) Gate Charge TC= 125 °C 25 °C - 55 °C VDS= 30 V ID= 50 A C -Capacitance (pF) gfs- Transconductance (S) ID- Drain Current (A) RDS(on)- T GS C= -55 °C 25°C 125 °C VGS= 10 V g

www.VBsemi.com TYPICAL CHARACTERISTICS(25 °C unless noted) VGS= 10 V ID= 20 A 2.5 100 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75100 125 150 175 TJ-Junction Temperature(°C) On-Resistance vs. Junction Temperature VSD-Source-to-DrainVoltage(V) Source-Drain Diode Forward Voltage g TJ= 150 °C RDS(on) TJ= 25 °C -On-Resistance (Normalized) IS- Source Current (A)

www.VBsemi.com THERMAL RATINGS 1000 100 0.1 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS> minimum VGSat which RDS(on) TA -Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature is specified Safe Operating Area 0.1 0.01 10-4 10-3 10-2 10-1 1 Square WavePulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Limited by RDS(on)* 10µs 100 µs 1ms 10ms 100 ms DC TC= 25 °C SinglePulse Duty Cycle = 0.5 0.2 0.1 0.05 0.02 I Single Pulse D-Drain Current (A)Normalized EffectiveTransient Thermal Impedance ID- Drain Current (A) g

www.VBsemi.com TO-220AB Ø P Notes *M= 1.32mmto1.62mm(dimension including protrusion) Heatsinkhole for HVM C E 1 2 3 b(1) b e e(1) A F J(1) L D H(1) L(1) Q DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN:X12-0208-Rev. N,08-Oct-12 DWG:5471 g

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