4435 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1366）
Description
The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -30V l ID (at VGS = -10V) -11A l RDS(ON) (at VGS = -10V) < 20mΩ l RDS(ON) (at VGS = -4.5V) < 33mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging
4435 SOP-8 4435 4000pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -11 A Pulsed Drain Current (note1) IDM -44 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W SOP-8 P-Channel Enhancement Mode Power MOSFET Schematic diagram pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1366） Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.4 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -10A -- 12 20 mΩ gFS VDS = -5V,ID = -10A -- 20 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 1818 -- pFOutput Capacitance Coss -- 233 -- Reverse Transfer Capacitance Crss -- 203 -- Total Gate Charge Qg VDD = -15V, ID = -5A, VGS = -10V -- 40 -- nCGate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 7.5 -- Turn-on Delay Time td(on) VDD = -15V, ID = -5A, RG = 2.7Ω -- 20 -- ns Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 55 -- Turn-off Fall Time tf -- 15 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -11 A Body Diode Voltage VSD TJ = 25ºC, ISD = -10A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -11A, VGS = 0V di/dt=-100A/us -- 15 -- nC Reverse Recovery Time Trr -- 10 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1366） Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1366）