4402 GOFORD | Alldatasheet
Document overview
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Technical content
Description
The 4402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high E AS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply Schematic diagram Marking and pin Assignment SOP-8 top view Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous I D 30 A Drain Current-Continuous(T C =100℃) I D (100℃) 21 A Pulsed Drain Current I DM 80 A Maximum Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ 4402 GOFORD Page HTTP://www.gofordsemi.com T E L 961262 F A X V D S S R D S O N 6.8 A 4.5V @ (Typ) Ωm20V R D S O N 2.5V (Typ) @ Ωm I D
Thermal Resistance,Junction-to-Case (Note 2) R θJC 50 /W℃ Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 - - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 500 Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.64 1 V V GS =4.5V, I D =8A - 6.8 16 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =6A - 8 25 mΩ Forward Transconductance g FS V DS =5V,I D =20A 26 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 938 - PF Output Capacitance C oss - 142 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 99 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 5 - nS Turn-on Rise Time t r - 12 - nS Turn-Off Delay Time t d(off) - 19 - nS Turn-Off Fall Time t f V DD =15V, R L =0.75Ω V GS =10V,R G =3Ω - 6 - nS Total Gate Charge Q g - 17.5 nC Gate-Source Charge Q gs - 3 nC Gate-Drain Charge Q gd V DS =15V,I D =20A, V GS =10V - 4.1 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A - 1.2 V Diode Forward Current (Note 2) I S - - 30 A Reverse Recovery Time t rr - 19 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20A di/dt = 100A/μs (Note3) - 10 - nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 4402 GOFORD Page HTTP://www.gofordsemi.com T E L 961262 F A X nA
1）E AS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： 4402 GOFORD Page HTTP://www.gofordsemi.com T E L 961262 F A X
HTTP://www.gofordsemi.com T E L 961262 F A X