3401 GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1408-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -4.2 A Pulsed Drain Current (note1) IDM -17 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 104 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The 3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -30V l ID (at VGS = -10V) -4.2A l RDS(ON) (at VGS = -10V) < 55mΩ l RDS(ON) (at VGS = -4.5V) < 65mΩ l RDS(ON) (at VGS = -2.5V) < 90mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging
3401 SOT-23 3401 3000pcs/Reel
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1408-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.6 -0.8 -1.3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -3A -- 40 55 mΩVGS = -4.5V, ID = -3A -- 48 65 gFS VDS = -5V,ID = -3A -- 10 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 670 -- pFOutput Capacitance Coss -- 70 -- Reverse Transfer Capacitance Crss -- 63 -- Total Gate Charge Qg VDD = -15V, ID = -3A, VGS = -4.5V -- 8.5 -- nCGate-Source Charge Qgs -- 1.8 -- Gate-Drain Charge Qgd -- 2.7 -- Turn-on Delay Time td(on) VDD = -15V, ID = -3A, RG = 6Ω -- 7 -- ns Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 12 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -4.2 A Body Diode Voltage VSD TJ = 25ºC, ISD = -3A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -3A, VGS = 0V di/dt=-100A/us -- 8 -- nC Reverse Recovery Time Trr -- 14 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1408-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1408-V1.0)