2302 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1524-V1.1)
Description
The 2302 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS 20V ⚫ ID (at VGS = 10V) 4.3A ⚫ RDS(ON) (at VGS = 4.5V) < 27mΩ ⚫ RDS(ON) (at VGS = 2.5V) < 44mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging
2302 SOT-23 2302 3000pcs/Reel
Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 4.3 A Pulsed Drain Current (note1) IDM 10 A Gate-Source Voltage VGS ±10 V Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 125 ºC/W Schematic diagram SOT-23 N-Channel Enhancement Mode Power MOSFET Marking and pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1524-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 uA Gate-Source Leakage IGSS VGS = ±10V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 0.4 1.0.7 0 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 2.2A -- 21 27 mΩ VGS = 2.5V, ID = 2.2A -- 28 44 Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 356 -- pFOutput Capacitance Coss -- 77 -- Reverse Transfer Capacitance Crss -- 70 -- Total Gate Charge Qg VDD = 10V, ID = 2A, VGS = 4.5V -- 4 -- nCGate-Source Charge Qgs -- 0.7 -- Gate-Drain Charge Qgd -- 1.2 -- Turn-on Delay Time td(on) VDD = 10V, ID = 2A, RG = 6Ω -- 10 -- ns Turn-on Rise Time tr -- 50 -- Turn-off Delay Time td(off) -- 17 -- Turn-off Fall Time tf -- 10 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 4.3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 Gate Charge Test Circuit FAX:0755-29961466(A1524-V1.1) EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 SOT- FAX:0755-29961466(A1524-V1.1) Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°