2301 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1611-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Continuous Drain Current ID -3 A Pulsed Drain Current (note1) IDM -12 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 125 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The 2301 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -20V l ID (at VGS = -10V) -3A l RDS(ON) (at VGS = -4.5V) < 56mΩ l RDS(ON) (at VGS = -2.5V) < 80mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging
2301 SOT-23 2301 3000pcs/Reel
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1611-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.45 -0.65 -0.9 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -1A -- 4.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1.0MHz -- 640 -- pFOutput Capacitance Coss -- 66 -- Reverse Transfer Capacitance Crss -- 60 -- Total Gate Charge Qg VDD = -10V, ID = -1A, VGS = -10V -- 8.5 -- nCGate-Source Charge Qgs -- 1.2 -- Gate-Drain Charge Qgd -- 2.1 -- Turn-on Delay Time td(on) VDD = -10V, ID = -1A, RG = 3.3Ω -- 36 -- ns Turn-on Rise Time tr -- 7.2 -- Turn-off Delay Time td(off) -- 56 -- Turn-off Fall Time tf -- 53 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -3 A Body Diode Voltage VSD TJ = 25ºC, ISD = -1A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -1A, VGS = 0V di/dt=-100A/us -- 27 -- nC Reverse Recovery Time Trr -- 37 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1611-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1611-V1.1)