15N50C1

15N50C1 SYC | Alldatasheet

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15A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N50 is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON)<0.35Ω @ VGS=10V * High Switching Speed  SYMBOL 1.Gate 3.Source 2.Drain TO-220F2 TO-220F1  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 15N50L-TF1-T 15N50G-TF1-T TO-220F1 G D S Tube 15N50L-TF2-T 15N50G-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING INFORMATION PACKAGE MARKING TO-220F1 TO-220F2 15N50C1 MOSFET N 30V 15.0A 0.350 OHM www.sycelectronica.com.ar

 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous TC=25°C ID 15 A TC=100°C 9 A Pulsed (Note 2) I DM 60 A Avalanche Current (Note 2) I AR 15 A Avalanche Energy Single Pulsed (Note 3) E AS 731 mJ Repetitive (Note 2) E AR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 15 V/ns Power Dissipation (TC=25°C) TO-220F1 PD

48 W TO-220F2 52

Derate above 25°C TO-220F1 0.384 W/°C TO-220F2 0.416 Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating; Pulse width limit ed by maximum junction temperature. 3. L=6.5mH, I AS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C 4. I SD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220F1 θJC 2.6 °C/W TO-220F2 2.4 www.sycelectronica.com.ar

 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V, TJ=25°C 500 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current I DSS VDS=500V, VGS=0V, 1 µA VDS=320V, TC=125°C 10 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse V GS=-30V , VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS=VDS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=7.5A 0.3 0.35 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0MHz 2300 2600 pF Output Capacitance C OSS 250 270 pF Reverse Transfer Capacitance C RSS 26 30 pF SWITCHING PARAMETERS Total Gate Charge Q G VDS=320V, VGS=10V, ID=15A (Note 1, 2) 210 240 nC Gate to Source Charge Q GS 35 nC Gate to Drain ("Miller") Charge Q GD 60 nC Turn-ON Delay Time t D(ON) VDD=200V, ID=15A, RG=25Ω (Note 1, 2) 100 120 ns Rise Time t R 150 170 ns Turn-OFF Delay Time t D(OFF) 460 500 ns Fall-Time t F 180 210 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 15 A Maximum Body-Diode Pulsed Current I SM 60 A Drain-Source Diode Forward Voltage V SD I SD=15A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr ISD=15A, VGS=0V, dIF/dt=100A/µs (Note 1) 333 ns Body Diode Reverse Recovery Charge Q RR 3.24 µC Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%. 2. Essentially Independent of Operating Temperature Typical Characteristics www.sycelectronica.com.ar

 TEST CIRCUITS AND WAVEFORMS 10V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS DUT 1mA VDS VGS RL 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms www.sycelectronica.com.ar

 TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L Driver www.sycelectronica.com.ar

 TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.60 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 100 150 200 250 300 0 120 360 480 600240 0 100 150 200 250 300 Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. www.sycelectronica.com.ar