0785_XP161A1355PR

0785_XP161A1355PR TOREX | Alldatasheet

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1PXFS.04'&5 846 ˙(FOFSBM%FTDSJQUJPO ˙'FBUVSFT ˙"QQMJDBUJPOT ˙1JO$POGJHVSBUJPO ˙1JO"TTJHONFOU ˙&RVJWBMFOU$JSDVJU ˙"CTPMVUF.BYJNVN3BUJOHT The XP161A1355PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. Low on-state resistance: Rds (on) = 0.05Ω ( Vgs = 4.5V ) : Rds (on) = 0.07Ω ( Vgs = 2.5V ) : Rds (on) = 0.15Ω ( Vgs = 1.5V ) Ultra high-speed switching Gate protect diode built-in Operational Voltage : 1.5V High density mounting : SOT-89 GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.05Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in ̎ ̏ 4 % ( 405 ʢ5017*&8ʣ PIN NUMBER PIN NAME FUNCTION G S D Gate Source Drain ̎ ̏ /$IBOOFM.04'&5 EFWJDFCVJMUJO Ta=25OC SYMBOL RATINGS UNITS Vdss 20 V Vgss ʶ 8 V Id 4 A Idp 16 A Idr 4 A Pd 2 W Tch 150 OC Tstg - 55 ~ 150 OC ( note ) : When implemented on a ceramic PCB Storage Temperature Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) PARAMETER 4@91"131. ϖʔδ

91"13 847 ˙&MFDUSJDBM$IBSBDUFSJTUJDT DC Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Drain Cut-off Current Idss Vds = 20V , Vgs = 0V 10 µA Gate-Source Leakage Current Igss Vgs = ± 8V , Vds = 0V ± 10 µA Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 0.5 1.2 V Drain-Source On-state Resistance Rds ( on ) Id = 2A , Vgs = 4.5V 0.37 0.05 Ω Id = 2A , Vgs = 2.5V 0.05 0.07 Ω ( note ) Id = 0.5A , Vgs = 1.5V 0.10.1 5 Ω Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Dynamic Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance Ciss 390 pF Output Capacitance Coss Vds = 10V , Vgs = 0V 210 pF Feedback Capacitance Crss f = 1 MHz 90 pF Switching Characteristics Ta=25°C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Turn-on Delay Time td ( on ) 10 ns Rise Time tr Vgs = 5V , Id = 2A 15 ns Turn-off Delay Time td ( off ) Vdd = 10V 85 ns Fall Time tf 45 ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Thermal Resistance Implement on a ceramic PCB ( channel-ambience ) Id = 2A , Vds = 10V| Yfs | S 10 °C / W62.5Rth ( ch-a ) Vf If = 4A , Vgs = 0V V 0.85 1.1 4@91"131. ϖʔδ

91"13 848 ˙5ZQJDBM1FSGPSNBODF$IBSBDUFSJTUJDT ˆ ˆ ˆ 1VMTF5FTU 7HT ˆ 1VMTF5FTU 7HT %SBJO4PVSDF7PMUBHF7ET 7 (BUF4PVSDF7PMUBHF7HT 7 7ET 1VMTF5FTU ˆ DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ˆ 1VMTF5FTU (BUF4PVSDF7PMUBHF7HT 7 %SBJO$VSSFOU*E " %SBJO4PVSDF0O4UBUF3FTJTUBODF3ET PO Њ %SBJO4PVSDF0O4UBUF3FTJTUBODF3ET PO Њ DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE %SBJO$VSSFOU*E " %SBJO$VSSFOU*E " 1VMTF5FTU "NCJFOU5FNQ5PQS ˆ 7HT 7ET DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE "NCJFOU5FNQ5PQS ˆ %SBJO4PVSDF0O4UBUF3FTJTUBODF 3ET PO Њ (BUF4PVSDF$VU0GG7PMUBHF7BSJBODF 7HT PGG 7BSJBODF 7 4@91"131. ϖʔδ

91"13 849 $PTT $JTT $STT US UE PO UE PGG UG %SBJO4PVSDF7PMUBHF7ET 7 %SBJO$VSSFOU*E " CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT 7HT 7EE˺7 ЖT EVUZ≤ ˆ7HT G .)[ ˆ 4XJUDIJOH5JNFU OT $BQBDJUBODF$ Q' STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 1VMTF8JEUI18 T 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U 4JOHMF1VMTF (BUF$IBSHF2H OD 4PVSDF%SBJO7PMUBHF7TE 7 3UI DIB *NQMFNFOUFEPOBDFSBNJD1$# ˆ 1VMTF5FTU7ET ˆ REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE 7HT GATE-SOURCE VOLTAGE vs. GATE CHARGE (BUF4PVSDF7PMUBHF7HT 7 3FWFSTF%SBJO$VSSFOU*ES " 4@91"131. ϖʔδ