0783_XP161A11A1PR

0783_XP161A11A1PR TOREX | Alldatasheet

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Technical content

1PXFS.04'&5 838 ˙(FOFSBM%FTDSJQUJPO ˙'FBUVSFT ˙"QQMJDBUJPOT ˙1JO$POGJHVSBUJPO ˙1JO"TTJHONFOU ˙&RVJWBMFOU$JSDVJU ˙"CTPMVUF.BYJNVN3BUJOHT The XP161A11A1PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V) : Rds(on)=0.105Ω(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 4.5V High density mounting : SOT-89 GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.105Ω (max) NGate Protect Diode Built-in NUltra High-Speed Switching 405 ʢ5017*&8ʣ (4 % /$IBOOFM.04'&5 EFWJDFCVJMUJO PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg ±20 150 -55~150 V V A A A W SYMBOL RATINGS UNITS Ta=25˚C When implemented on a ceramic PCBNote: PIN NUMBER PIN NAME FUNCTION G S D Gate Source Drain 4@91""131.ϖʔδ

91""13 839 ˙&MFDUSJDBM$IBSBDUFSJTUJDT DC Characteristics Ta=25: PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 1.0 2.5 V 0.105 0.075 Id=2A, Vgs=4.5VΩ Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 5.5 S Body Drain Diode Forward Voltage 0.85 1.1 V Drain Cut-off Current Idss 10 µA Vf Vds=30V, Vgs=0V Id=1mA, Vds=10V Id=2A, Vds=10V If=4A, Vgs=0V Vgs=±20V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=2A, Vgs=10V 0.05 0.065 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 150 270 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic Characteristics Ta=25: Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns35 10n s Vgs=5V, Id=2A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching Characteristics Ta=25: PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-ambience) 62.5 :/WImplement on a ceramic PCB SYMBOL CONDITIONS MAX MIN TYP Thermal Characteristics 4@91""131.ϖʔδ

91""13 840 ˙5ZQJDBM1FSGPSNBODF$IBSBDUFSJTUJDT Drain-Source On-State Resistance :Rds (on) (Ω) Ambient Temp.:Topr (:) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test 7HTʹ7 *Eʹ" Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (:) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds=10V, Id=1mA Drain-Source Voltage:Vds (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: 7HTʹ7 Drain Current:Id (A) 77 7 Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Vds=10V, Pulse Test 5Bʹˆ ˆ ˆ Drain-Source On-State Resistance :Rds (on) (Ω) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: *Eʹ" Drain-Source On-State Resistance :Rds (on) (Ω) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: 7HTʹ7 4@91""131.ϖʔδ

91""13 841 7ET ˆ STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 1VMTF8JEUI18 T 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U 4JOHMF1VMTF (BUF$IBSHF2H OD 4PVSDF%SBJO7PMUBHF7TE 7 (BUF4PVSDF7PMUBHF7HT 7 3FWFSTF%SBJO$VSSFOU*ES " 3UI DIB *NQMFNFOUFEPOBDFSBNJD1$# ˆ 1VMTF5FTU GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE 7HT $BQBDJUBODF$ Q' %SBJO4PVSDF7PMUBHF7ET 7 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE 7HTʹ7 Gʹ.)[ 5Bʹˆ $JTT $PTT $STT 4XJUDIJOH5JNFU OT %SBJO$VSSFOU*E " SWITCHING TIME vs. DRAIN CURRENT 7HTʹ7 7EE˺7 18ʹЖT EVUZ≤ 5Bʹˆ UG US UEʢPGGʣ UEʢPOʣ 4@91""131.ϖʔδ