0782_XP161A0390PR

0782_xp161a0390pr TOREX | Alldatasheet

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1PXFS.04'&5 858 ˙(FOFSBM%FTDSJQUJPO ˙'FBUVSFT ˙"QQMJDBUJPOT ˙1JO$POGJHVSBUJPO ˙1JO"TTJHONFOU ˙&RVJWBMFOU$JSDVJU ˙"CTPMVUF.BYJNVN3BUJOHT The XP161A0390PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. Low on-state resistance: Rds(on)=0.09Ω(Vgs=4.5V) : Rds(on)=0.13Ω(Vgs=2.5V) : Rds(on)=0.3Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOT-89 GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.09Ω (max) NUltra High-Speed Switching 405 ʢ5017*&8ʣ ̜ ̨ ̙ /$IBOOFM.04'&5 EFWJDFCVJMUJO PIN NUMBER PIN NAME FUNCTION G S D Gate Source Drain PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg 150 -55~150 V V A A A W SYMBOL RATINGS UNITS Ta=25: When implemented on a ceramic PCBNote: 4@91"131. ϖʔδ

91"13 859 ˙&MFDUSJDBM$IBSBDUFSJTUJDT DC Characteristics Ta=25: PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) 0.5 V 0.13 Id=1.5A, Vgs=2.5VΩ 0.3 Id=1.5A, Vgs=1.5VΩ Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 6S Body Drain Diode Forward Voltage 0.85 1.1 V Drain Cut-off Current Idss 10 µA Vf Vds=20V, Vgs=0V Id=1mA, Vds=10V Id=1.5A, Vds=10V If=3A, Vgs=0V Vgs=±8V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=1.5A, Vgs=4.5V 0.09 0.1 0.17 0.07 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 170 380 pF Vds=10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic Characteristics Ta=25: Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns70 10n s Vgs=5V, Id=1.5A Vdd=10V SYMBOL CONDITIONS MAX MIN TYP Switching Characteristics Ta=25: PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-ambience) 62.5 ˚C/WImplement on a ceramic PCB SYMBOL CONDITIONS MAX MIN TYP Thermal Characteristics 4@91"131. ϖʔδ

91"13 860 ˙5ZQJDBM1FSGPSNBODF$IBSBDUFSJTUJDT Drain-Source On-State Resistance :Rds (on) (Ω) Ambient Temp.:Topr (:) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test *Eʹ" 7HTʹ7 Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (:) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 7ETʹ7 *EʹN" Drain Current:Id (A) Drain-Source Voltage:Vds (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: 7HTʹ7 5PQSʹˆ ˆˆ Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V Drain-Source On-State Resistance :Rds (on) (Ω) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: 7 *Eʹ7 Drain-Source On-State Resistance :Rds (on) (Ω) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: 7HTʹ7 Drain Current:Id (A) 4@91"131. ϖʔδ

91"13 861 Capacitance:C (pF) Drain-Source Voltage:Vds (V) CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz $JTT $PTT $STT Switching Time:t (ns) Drain Current:Id (A) SWITCHING TIME vs. DRAIN CURRENT Vgs=5V, Vdd˺10V, PW=10µsec. duty≤1% UG US UEʢPGGʣ UEʢPOʣ Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) GATE-SOURCE VOLTAGE vs. GATE CHARGE Vds=10V, Id=3A Reverse Drain Current:Id (A) Source-Drain Voltage:Vsd (V) REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test 7HTʹ7 Pulse Width:PW (sec) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB) Single Pulse 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U 4@91"131. ϖʔδ