0770_XP152A01D8MR

0770_XP152A01D8MR TOREX | Alldatasheet

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1PXFS.04'&5 834 ˙(FOFSBM%FTDSJQUJPO ˙'FBUVSFT ˙"QQMJDBUJPOT ˙1JO$POGJHVSBUJPO ˙1JO"TTJHONFOU The XP152A01D8MR is a P-Channel Power MOS FET with low on- state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.48Ω(Vgs=-4.5V) : Rds(on)=0.80Ω(Vgs=-2.5V) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOT-23 GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.48Ω (max) NUltra High-Speed Switching 405 ʢ5017*&8ʣ 4 ( 1$IBOOFM.04'&5 EFWJDFCVJMUJO ̜ (BUF ̨ 4PVSDF ̙ %SBJO PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Vdss Vgss Id Idp Idr Pd Tch Tstg -20 ±12 -0.5 -1.5 -0.5 0.5 150 -55~150 V V A A A W SYMBOL RATINGS UNITS Ta=25: When implemented on a ceramic PCBNote: ˙&RVJWBMFOU$JSDVJU ˙"CTPMVUF.BYJNVN3BUJOHT 4@91"%.31.ϖʔδ

91"%.3 835 ˙&MFDUSJDBM$IBSBDUFSJTUJDT DC Characteristics Ta=25: PARAMETER UNITS Gate-Source Cut-off Voltage Vgs(off) -0.5 V 0.8 0.6 Id=-0.3A, Vgs=-2.5VΩ Gate-Source Leakage Current Igss µA±10 Forward Transfer Admittance (note) 1S Body Drain Diode Forward Voltage -0.8 -1.1 V Drain Cut-off Current Idss -10 µA Vf Vds=-20V, Vgs=0V Id=-1mA, Vds=-10V Id=-0.3A, Vds=-10V If=-0.5A, Vgs=0V Vgs=±12V, Vds=0V Drain-Source On-state Resistance (note) Rds(on) ΩId=-0.3A, Vgs=-4.5V 0.36 0.48 SYMBOL CONDITIONS MAX MIN TYP PARAMETER UNITS Feedback Capacitance Crss pF Output Capacitance Coss pF Input Capacitance Ciss 100 180 pF Vds=-10V, Vgs=0V f=1MHz SYMBOL CONDITIONS MAX MIN TYP Dynamic Characteristics Ta=25: Effective during pulse test.Note: Yfs PARAMETER UNITS Fall Time tf ns Rise Time tr ns Turn-on Delay Time td (on) Turn-off Delay Time td (off) ns30 10n s Vgs=-5V, Id=-0.3A Vdd=-10V SYMBOL CONDITIONS MAX MIN TYP Switching Characteristics Ta=25: PARAMETER UNITS Rth (ch-a) Thermal Resistance (channel-ambience) 250 :/WImplement on a ceramic PCB SYMBOL CONDITIONS MAX MIN TYP Thermal Characteristics 4@91"%.31.ϖʔδ

91"%.3 836 ˙5ZQJDBM1FSGPSNBODF$IBSBDUFSJTUJDT Drain Current:Id (A) Drain-Source Voltage:Vds (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Pulse Test, Ta=25: 7HTʹ7 Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=-10V 5PQSʹˆ ˆ Drain-Source On-State Resistance :Rds (on) (Ω) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Pulse Test, Ta=25: *Eʹ" " Drain-Source On-State Resistance :Rds (on) (Ω) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: 7HT Drain-Source On-State Resistance :Rds (on) (Ω) Ambient Temp.:Topr (:) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test, Ta=25: *Eʹ" 7HTʹ7 Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) Ambient Temp.:Topr (:) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 7ETʹ7 *EʹN" 4@91"%.31.ϖʔδ

91"%.3 837 Capacitance:c (pF) Drain-Source Voltage:Vds (V) CAPACITANCE vs. DRAIN-SOURCE VOLTAGE Vgs=0V, f=1MHz $JTT $PTT $STT Switching Time:t (ns) Drain Current:Id (A) SWITCHING TIME vs. DRAIN CURRENT Vgs=-5V, Vdd˺-10V, PW=10µsec. duty≤1% UG US UEʢPGGʣ UEʢPOʣ (BUF$IBSHF2H OD (BUF4PVSDF7PMUBHF7HT 7 7ET ˆ 4PVSDF%SBJO7PMUBHF7TE 7 3FWFSTF%SBJO$VSSFOU*ES " ˆ 1VMTF5FTU 7HT 1VMTF8JEUI18 T 4UBOEBSEJ[FE5SBOTJUJPO5IFSNBM3FTJTUBODFЍT U 3UI DIB ˆ8 JNQMFNFOUFEPOBDFSBNJD1$# Single Pulse 4@91"%.31.ϖʔδ