VCR2N INTERFET | Alldatasheet
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VCR2N, VCR4N, VCR7N N-Channel Silicon Voltage Controlled Resistor JFET ¥ Small Signal Attenuators ¥ Filters ¥ Amplifier Gain Control ¥ Oscillator Amplitude Control Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 15 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C VCR2N & VCR4N TOÐ18 Package See Section G for Outline Dimensions Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
TOÐ72 Package See Section G for Outline Dimensions Pin Configuration At 25°C free air temperature: NJ72 NJ16 Process Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 15 – 15 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 5 – 0.2 nA V GS = – 15V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 1 – 3.5 – 3.5 – 7 V I D = – 1 µA, VDS = 10V Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 20 60 200 600 Ω VGS = ØV, I D = ØA f = 1 kHz Drain Gate Capacitance C dg 7.5 3 pF V DG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance C sg 7.5 3 pF V DG = 10V, ID = ØA f = 1 MHz VCR7N At 25°C free air temperature: NJ01 Process Static Electrical Characteristics Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 15 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 0.1 nA V GS = – 15V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 2.5 – 5 V I D = – 1 µA, VDS = 10V Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 4000 8000 Ω VGS = ØV, I D = ØA f = 1 kHz Drain Gate Capacitance C dg 1.5 pF V DG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance C sg 1.5 pF V DG = 10V, ID = ØA f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:33 AM Page C-8