J113 INTERFET | Alldatasheet
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J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 35 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Source, 3 Gate
SMPJ111, SMPJ112, SMPJ113 At 25°C free air temperature J111 J112 J113 Process NJ132 Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 35 – 35 – 35 V I G = – 1µA, VDS = ØV Gate Reverse Current I GSS – 1– 1– 1 n A V GS = – 15V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 3 – 10 – 1 – 5 – 3 V V DS = 5V, ID = 1 µA Drain Saturation Current (Pulsed) I DSS 20 5 2 mA V DS = 15V, VGS = ØV Drain Cutoff Current I D(OFF) – 1– 1– 1 n A V DS = 15V, VGS = – 10V Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 30 50 100 Ω VGS = ØV, VDS = 0.1V f = 1 kHz Drain Gate Capacitance C dg 555 p F V DS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance C gs 555 p F V DS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance C gd + Cgs 28 28 28 pF V DS = VGS = ØV f = 1 MHz Switching Characteristics Typ Typ Typ Turn ON Delay Time t d(on) 777 n s J111 J112 J113 Rise Time t r 662 n s V DD 10 10 10 V Turn OFF Delay Time t d(off) 20 20 20 ns V GS(OFF) – 12 – 7 – 5 V Fall Time t f 15 15 15 ns R L 800 1600 3200 Ω ¥ Choppers ¥ Commutators ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-51