J177 INTERFET | Alldatasheet
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J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 30 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration
1 Drain, 2 Gate, 3 Source
SMPJ176, SMPJ177 At 25°C free air temperature: J176 J177 Process PJ99 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 30 30 V I G = 1 µA, VDS = ØV Gate Reverse Current I GSS 11 n A V GS = 20V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) 1 4 0.8 2.25 V V DS = – 15V, ID = – 10 nA Drain Saturation Current (Pulsed) I DSS – 2 – 35 – 1.5 – 20 mA V DS = – 15V, VGS = ØV Drain Cutoff Current I D(OFF) – 1 – 1 nA V DS = – 15V, VGS = 10V Dynamic Electrical Characteristics Max Max Drain Source ON Resistance r ds(on) 250 300 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Dynamic Electrical Characteristics Typ Typ Drain Gate Capacitance C gd 5.5 5.5 pF V DS = ØV, VGS = 10V f = 1 MHz Source Gate Capacitance C gs 5.5 5.5 pF V DS = ØV, VGS = 10V f = 1 MHz Drain Gate + Source Gate Capacitance C gd + Cgs 32 32 pF V DS = VGS = ØV f = 1 MHz Switching Characteristics J176 J177Turn ON Delay Time td (on) 15 20 ns VDD – 6 – 6 VRise Time t r 20 25 ns VGS(OFF) 63 V Turn OFF Delay Time td (off) 15 20 ns RL 5.6 k 10 k Ω Fall Time t f 20 25 ns VGS(ON) ØØ V ¥ Choppers ¥ Commutators ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-53