IF1801 INTERFET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage – 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ52 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IF1801 Process NJ1800DL Static Electrical Characteristics Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 20 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 0.1 nA V GS = – 10V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 0.35 – 2 V V DS = 10V, ID = 0.5 nA Drain Saturation Current (Pulsed) I DSS 30 mA V DS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 50 mS V DS = 10V, ID = 5 mA f = 1 kHz Forward Transconductance Common Source Input Capacitance C iss 100 pF V DS = 10V, ID = 5 mA f = 1 MHz Common Source Crss 50 pF V DS = 10V, ID = 5 mA f = 1 MHz Reverse Transfer Capacitance Typ Equivalent Short Circuit ¯eN 0.5 nV/ √Hz V DG = 4V, ID = 5 mA f = 1 kHz Input Noise Voltage ¥ Low-Noise, High Gain Amplifier 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-33