N0001H INTERFET | Alldatasheet

Document overview

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Technical content

Features

  • Low Input Capacitance: 2.0pF Typical
  • Low Gate Leakage: 0.5pA Typical
  • High Breakdown Voltage: -60V Typical
  • High Input Impedance
  • Small Die: 365um X 365um X 203um
  • Bond Pads: 90um X 90um
  • Substrate Connected to Gate
  • Au Back-Side Finish

Applications

  • Small Signal Amplifier
  • Ultrahigh Impedance Pre-Amplifier
  • Pico-Amp Diodes (PAD)
  • High Input Impedance Buffers
  • Custom Part Options

Description

The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications. Test Pattern Geometry Top View G G S-D S-D Standard Parts

  • 2N4117/A, 2N4118/A, 2N4119/A
  • PAD1, PAD2, PAD5, PAD10
  • PAD20, PAD50
  • DPAD1, DPAD2, DPAD5, DPAD10
  • DPAD20, DPAD50, DPAD100
  • IFN421, IFN422, IFN423, IFN424
  • IFN425, IFN426, IFN427, IFN428
  • VCR7N Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -50 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Product Summary Parameters Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage -50 -60 V IDSS Drain to Source Saturation Current 0.03 0.6 mA VGS(off) Gate to Source Cutoff Voltage -0.5 -6.0 V GFS Forward Transconductance 150 μS

www.InterFET.com N0001H Document Number: IF35501.R00 InterFET Corporation February, 2019 N0001HInterFET Product Folder Technical Support Order Now Order Now

Electrical Characteristics

Static Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit BVGSS Gate to Source Breakdown Voltage IG = -1μA, VDS = 0V -50 -60 V IGSS Gate to Source Reverse Current VGS = -20V, VDS = 0V -0.5 -10 pA VGS(OFF) Gate to Source Cutoff Voltage VDS = 10V, ID = 1μA -0.5 -6.0 V IDSS Drain to Source Saturation Current VDS = 10V, VGS = 0V 0.03 0.6 mA Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit GFS Forward Transconductance VDS = 10V, VGS = 0 V, f = 1kHz 150 μS Ciss Input Capacitance VDS = 10V, VGS = 0 V, f = 1MHz 2 pF Crss Reverse Transfer Capacitance VDS = 10V, VGS = 0 V, f = 1MHz 0.9 pF en Noise Voltage VDS = 10V, ID = 0.03mA, f = 1kHz 14 nV/√Hz

www.InterFET.com N0001H Document Number: IF35501.R00 InterFET Corporation February, 2019 N0001HInterFET Product Folder Technical Support Order Now Order Now Typical N0001H Characteristics 100 200 300 400 500 0.0 -0.6 -1.2 -1.8 -2.4 -3.0 -3.6 -4.2 -4.8 -5.4 -6.0 Drain Current, IDSS (uA) Gate to Source Voltage, VGS(OFF) (V) Typical IDSS - VGS(OFF) VGS = 0V VDS = 10V Drain Current, ID (uA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -0.8V VGS = 0.0V VGS = -0.2V VGS = -0.4V VGS = -0.6V 100 Drain Current, ID (uA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -1.5V VGS = 0.0V VGS = -0.5V VGS = -0.9V VGS = -1.3V 100 120 140 160 180 200 Drain Current, ID (uA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -2.5V VGS = 0.0V VGS = -0.8V VGS = -1.5V VGS = -2.2V 100 150 200 250 300 350 400 450 Drain Current, ID (uA) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -5.0V VGS = 0.0V VGS = -1.5V VGS = -3.0V VGS = -4.5V 100 120 140 160 0.0 -0.6 -1.2 -1.8 -2.4 -3.0 -3.6 -4.2 -4.8 -5.4 -6.0 Transconductance, GFS (uS) Gate to Source Voltage, VGS(OFF) (V) Typical GFS - VGS(OFF) VGS = 0V VDS = 10V f = 1kHz

www.InterFET.com N0001H Document Number: IF35501.R00 InterFET Corporation February, 2019 N0001HInterFET Product Folder Technical Support Order Now Order Now Typical N0001H Characteristics (Continued) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0.0 -0.6 -1.2 -1.8 -2.4 -3.0 -3.6 -4.2 -4.8 -5.4 -6.0 On Resistance RDS(ON) (kOhms) Gate to Source Voltage, VGS(OFF) (V) Typical RDS(ON) - VGS(OFF) VGS = 0V f = 1kHz 0.01 0.1 100 Noise Voltage, en (nV/√Hz) Frequency, f (kHz) Typical Noise (nV/√Hz) ID = 0.03mA VDS = 15V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -10 Input Capacitance, CiSS (pF) Gate to Source Voltage, VGS (V) Typical CiSS - VGS VDS = 0V VDS = 10V f = 1MHz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Capacitance, CrSS (pF) Gate to Source Voltage, VGS (V) Typical CrSS - VGS VDS = 0V VDS = 10V f = 1kHz

www.InterFET.com N0001H Document Number: IF35501.R00 InterFET Corporation February, 2019 N0001HInterFET Product Folder Technical Support Order Now Order Now N0001H Die Geometry Mechanical Raw Die Dimensions 1. All linear dimensions are in micrometers.