VCR3P INTERFET | Alldatasheet
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P-Channel Silicon Voltage Controlled Resistor JFET Absolute maximum ratings at TA = 5¡C. Reverse Gate Source & Reverse Gate Drain Voltage 15 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C TOÐ18 Package Dimensions in Inches (mm) Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
At 25°C free air temperature: VCR3P Process PJ99 Static Electrical Characteristics Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS 15 V I G = 1 µA, VDS = ØV Gate Reverse Current I GSS 20 nA V GS = 15V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) 15V I D = – 1 µA, VDS = – 10V Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 70 200 Ω VGS = ØV, I D = ØA f = 1 kHz Drain Gate Capacitance C dg 25 pF V DG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance C sg 15 pF V GS = 10V, ID = ØA f = 1 MHz ¥ Small Signal Attenuators ¥ Filters ¥ Amplifier Gain Control ¥ Oscillator Amplitude Control 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375www.interfet.com Databook.fxp 1/13/99 2:09 PM Page C-9