VCR11 INTERFET | Alldatasheet
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N-Channel Silicon Voltage Controlled Resistor JFET ¥ Small Signal Attenuators ¥ Filters ¥ Amplifier Gain Control ¥ Oscillator Amplitude Control Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 15 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C TOÐ71 Package Dimensions in Inches (mm) Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
At 25°C free air temperature: VCR11N Process NJ26 Static Electrical Characteristics Min Max Unit Test Conditions Gate Source Breakdown Voltage V (BR)GSS – 25 V I G = – 1 µA, VDS = ØV Gate Reverse Current I GSS – 0.2 nA V GS = – 15V, VDS = ØV Gate Source Cutoff Voltage V GS(OFF) – 8 – 12 V I D = 1 µA, VDS = – 10V Static Drain Source ON Resistance Ratio rDS(MIN) .95 1 V DS = 100 mV, rDS1 = 200Ω rDS(MAX) .95 1 V GS1 = VGS2, rDS1 = 2 kΩ Dynamic Electrical Characteristics Drain Source ON Resistance r ds(on) 70 200 Ω VGS = ØV, I D = ØA f = 1 kHz Drain Gate Capacitance C dg 7.5 pF V DG = 10V, IS = ØA f = 1 MHz Source Gate Capacitance C sg 7.5 pF V GS = 10V, ID = ØA f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page C-10