US0008

US0008 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOT23 Pin Configuration Product Summery BV DSS R DS(ON)

N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =1A --- 260 310 mΩ V GS =4.5V , I D =0.5A --- 270 320 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient --- -4.2 --- mV/℃ I DSS Drain-Source Leakage Current V DS =80V , V GS =0V , T J =25℃ --- --- 1 uA I DSS Drain-Source Leakage Current V DS =80V , V GS =0V , T J =25℃ --- --- 5 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =1A --- 2.4 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (10V) V DS =80V , V GS =10V , I D =1A --- 9.7 13.6 nC Q gs Gate-Source Charge --- 1.6 2.2 Q gd Gate-Drain Charge --- 1.7 2.4 T d(on) Turn-On Delay Time V DD =50V , V GS =10V , R G =3.3Ω I D =1A --- 1.6 3.2 ns T r Rise Time --- 19 34 T d(off) Turn-Off Delay Time --- 13.6 27 T f Fall Time --- 19 38 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 508 711 pF C oss Output Capacitance --- 29 41 C rss Reverse Transfer Capacitance --- 16.4 23 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 1.2 A I SM Pulsed Source Current 2,4 --- --- 5 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =1A , dI/dt=100A/µs , T J =25℃ --- 14 --- nS Q rr Reverse Recovery Charge --- 9.3 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics US0008

N-Ch 100V Fast Switching MOSFETs 0.0 1.0 2.0 3.0 4.0 5.0 0 0.5 1 1.5 2 2.5 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 245 250 255 260 265 2468 1 0 V GS (V) R DSON (mΩ) I D =1A 0.4 0.8 1.2 1.6 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J US0008

N-Ch 100V Fast Switching MOSFETs 100 1000 1 5 9 1 31 72 12 5 V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.00 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 V DS (V) I D (A) T A =25℃ Single Pulse 10ms 100ms DC 100us 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA P DM D = T ON T Jpeak = T A + P DM x R θJA T ON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform US0008