UM3302

UM3302 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Absolute Maximum Ratings Thermal Data Dual SOP8 Pin Configuration Product Summery S1 S2 G2 D1 D1 D2 D2

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =10A --- 8.5 10.5 mΩ V GS =4.5V , I D =8A --- 12 15 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.0 1.5 2.5 V GS(th) V GS(th) Temperature Coefficient --- -5.8 --- mV/℃ I DSS Drain-Source Leakage Current V DS =24V , V GS =0V , T J =25℃ --- --- 1 uA V DS =24V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =5V , I D =10A --- 5.8 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (4.5V) V DS =15V , V GS =4.5V , I D =10A --- 12.5 17.5 nC Q gs Gate-Source Charge --- 4.4 6.2 Q gd Gate-Drain Charge --- 5 7.0 T d(on) Turn-On Delay Time V DD =15V , V GS =10V , R G =3.3Ω I D =10A --- 6.2 12.4 ns T r Rise Time --- 59 106 T d(off) Turn-Off Delay Time --- 27.6 55 T f Fall Time --- 8.4 16.8 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 1317 1845 pF C oss Output Capacitance --- 163 228.2 C rss Reverse Transfer Capacitance --- 131 183.4 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =25V , L=0.1mH , I AS =20A 45 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- 9.5 A I SM Pulsed Source Current 2,6 --- --- 40 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =10A , dI/dt=100A/µs , T J =25℃ --- 12.5 --- nS Q rr Reverse Recovery Charge --- 5 --- nC Diode Characteristics Guaranteed Avalanche Characteristics Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=0.1mH,I AS =35A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) UM3302

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-10V , I D =-6A --- 20 25 mΩ V GS =-4.5V , I D =-4A --- 34 42 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -1.0 -1.5 -2.5 V GS(th) V GS(th) Temperature Coefficient --- 4.6 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃ --- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance V DS =-5V , I D =-6A --- 17 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 13 26 Ω Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-6A --- 12.6 17.6 nC Q gs Gate-Source Charge --- 4.8 6.7 Q gd Gate-Drain Charge --- 4.8 6.7 T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V , R G =3.3Ω, I D =-6A --- 4.6 9.2 ns T r Rise Time --- 14.8 26.6 T d(off) Turn-Off Delay Time --- 41 82 T f Fall Time --- 19.6 39.2 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 1345 1883 pF C oss Output Capacitance --- 194 272 C rss Reverse Transfer Capacitance --- 158 221 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy V DD =-25V , L=0.1mH , I AS Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- -6.5 A I SM Pulsed Source Current 2,6 --- --- -26 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J t rr Reverse Recovery Time I F =-6A , dI/dt=100A/µs , T J =25℃ --- 16.3 --- nS Q rr Reverse Recovery Charge --- 5.9 --- nC Diode Characteristics Guaranteed Avalanche Characteristics Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) UM3302

N-Ch and P-Ch Fast Switching MOSFETs 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-Source Voltage (V) I D Drain Current (A) V GS =10V V GS =7V V GS =5V V GS =4.5V V GS =3V 2468 1 0 V GS (V) R DSON (mΩ) I D =8A 00 . 3 0 . 6 0 . 9 V SD , Source-to-Drain Voltage (V) I S - Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM3302

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 10000 1 5 9 1 31 72 12 5 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform UM3302

N-Ch and P-Ch Fast Switching MOSFETs 2468 1 0 V GS (V) R DSON (mΩ) I D =6A 0.2 0.4 0.6 0.8 1 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0.5 1.5 -50 0 50 100 150 T J ,Junction Temperature ( ℃) Normalized V GS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J Fig.6 Normalized R DSON v.s T J UM3302

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 DS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform UM3302