UM2429

UM2429 UNITPOWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

Applications

z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOP8 Pin Configuration Product Summery BV DSS R DS(ON)

P-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-8A --- 12 15 mΩ V GS =-2.5V , I D =-6A --- 18 22 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -0.5 -0.7 -1.2 V GS(th) V GS(th) Temperature Coefficient --- 3.13 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-16V , V GS =0V , T J =25℃ --- --- -1 uA V DS =-16V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±12V , V DS gfs Forward Transconductance V DS =-5V , I D =-8A --- 38 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 10 20 Ω Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-8A --- 37.6 52.6 nC Q gs Gate-Source Charge --- 7 9.8 Q gd Gate-Drain Charge --- 7.7 10.8 T d(on) Turn-On Delay Time V DD =-10V , V GS =-4.5V , R G =3.3Ω I D =-8A --- 13.8 27.6 ns T r Rise Time --- 73 131 T d(off) Turn-Off Delay Time --- 100 200 T f Fall Time --- 77 154 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 3710 5194 pF C oss Output Capacitance --- 360 504 C rss Reverse Transfer Capacitance --- 318 445 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- -8.5 A I SM Pulsed Source Current 2,4 --- --- -43 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J =25℃ --- --- -1 V t rr Reverse Recovery Time I F =-8A , dI/dt=100A/µs , T J =25℃ --- 22 --- nS Q rr Reverse Recovery Charge --- 10 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics UM2429

P-Ch 20V Fast Switching MOSFETs 123456 GS (V) R DSON (mΩ) I D =-10A SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J UM2429

P-Ch 20V Fast Switching MOSFETs 100 1000 10000 159 1 3 1 7 2 1 DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform UM2429