UM2605

UM2605 UNITPOWER | Alldatasheet

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z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data Dual SOP8 Pin Configuration Product Summery

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =4.5V , I D =4A --- 34 42 mΩ V GS =2.5V , I D =2A --- 40 50 V GS =1.8V , I D =1.5A 50 62 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 0.3 0.5 1 V GS(th) V GS(th) Temperature Coefficient --- -2.51 --- mV/℃ I DSS Drain-Source Leakage Current V DS =16V , V GS =0V , T J =25℃ --- --- 1 uA V DS =16V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±8V , V DS gfs Forward Transconductance V DS =5V , I D =4A --- 12 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (4.5V) V DS =15V , V GS =4.5V , I D =4A --- 6.2 8.7 nC Q gs Gate-Source Charge --- 0.8 1.1 Q gd Gate-Drain Charge --- 1.4 1.96 T d(on) Turn-On Delay Time V DD =10V , V GS =4.5V , R G =3.3Ω I D =4A --- 2.2 4.4 ns T r Rise Time --- 27.2 49.0 T d(off) Turn-Off Delay Time --- 16.8 33.6 T f Fall Time --- 6.8 13.6 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 382 534.8 pF C oss Output Capacitance --- 41 57.4 C rss Reverse Transfer Capacitance --- 33 46.2 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- 4.6 A I SM Pulsed Source Current 2,4 --- --- 18.4 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25℃ --- --- 1.2 V t rr Reverse Recovery Time I F =4A , dI/dt=100A/µs , T J =25℃ --- 4.7 --- nS Q rr Reverse Recovery C harge --- 1.33 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Diode Characteristics N-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted)

N-Ch and P-Ch Fast Switching MOSFETs V SD , Source-to-Drain Voltage (V) I S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature (℃ ) Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 V DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D △BV DSS /△T J BVDSS Temperature Coefficient Reference to 25℃ , I D R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V , I D =-2A --- 105 125 mΩ V GS =-2.5V , I D =-1.5A --- 145 170 V GS =-1.8V , I D =-1A 185 220 V GS(th) Gate Threshold Voltage V GS DS , I D =-250uA -0.3 -0.5 -1 V GS(th) V GS(th) Temperature Coefficient --- 3.97 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-16V , V GS =0V , T J =25℃ --- --- 1 uA V DS =-16V , V GS =0V , T J =55℃ --- --- 5 I GSS Gate-Source Leakage Current V GS =±8V , V DS gfs Forward Transconductance V DS =-5V , I D =-2A --- 6.3 --- S R g Gate Resistance V DS =0V , V GS Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-2A --- 5.6 7.8 nC Q gs Gate-Source Charge --- 0.72 1.0 Q gd Gate-Drain Charge --- 1.45 2.0 T d(on) Turn-On Delay Time V DD =-15V , V GS =-4.5V , R G =3.3Ω I D =-2A --- 4 8.0 ns T r Rise Time --- 25.6 46 T d(off) Turn-Off Delay Time --- 26 52 T f Fall Time --- 12.4 24.8 C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 332 465 pF C oss Output Capacitance --- 48 67 C rss Reverse Transfer Capacitance --- 42 59 Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,4 V G D =0V , Force Current --- --- -2.8 A I SM Pulsed Source Current 2,4 --- --- -11.2 A V SD Diode Forward Voltage V GS =0V , I S =-1A , T J t rr Reverse Recovery Time I F =-2A , dI/dt=100A/µs , T J =25℃ --- 23 --- nS Q rr Reverse Recovery Charge --- 4.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (T J =25 ℃, unless otherwise noted) Diode Characteristics

N-Ch and P-Ch Fast Switching MOSFETs 120 160 200 240 280 2468 1 0 GS (V) R DSON (mΩ) I D =-2A 0 0.3 0.6 0.9 1.2 SD , Source-to-Drain Voltage (V) S Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 T J ,Junction Temperature ( Normalized V GS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 T J , Junction Temperature (℃) Normalized On Resistance P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J

N-Ch and P-Ch Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 DS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R θJC 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform