UM4599 UNITPOWER | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free package Equivalent Circuit Outline UM4599 G：Gate S：Source D：Drain SOP-8 UM4599

(Ta=25°C) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown V oltage BV DSS 60 -60 V Gate-Source V oltage V GS ±20 ±20 V Continuous Drain Current @T A =25 °C (Note 2) I D 4.5 -3.5 A Continuous Drain Current @T A =70 °C (Note 2) I D 3.6 -2.8 A Pulsed Drain Current (Note 1) I DM 20 -20 A Power Dissipation for Dual Operation 2 1.6 (Note 2) Power Dissipation for Single Operation P D 0.9 (Note 3) W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R th,j-c 40 °C/W (Note 2) °C/W Thermal Resistance, Junction-to-ambient, max R th,j-a 135 (Note 3) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s. N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS 60 - - V V GS =0, I D =250μA V GS(th) 1.0 1.7 2.5 V V DS GS , I D =250μA I GSS - - ±100 nA V GS =±20V , V DS - - 1 V DS =48V , V GS I DSS - - 10 μA V DS =40V , V GS =0, Tj=55°C - 37 58 V GS =10V , I D =4.5A DS(ON) - 42 60 mΩ V GS =4.5V , I D =4A FS - 6 - S V DS =10V , I D =4.5A Dynamic Ciss - 1173 - Coss - 45 - Crss - 35 - pF V DS =25V , V GS =0, f=1MHz d(ON) - 8 20 r - 12 18 d(OFF) - 30 35 f - 7 15 ns V DS =30V , I D =1A, V GS =10V , R G =6Ω UM4599

*Qg - 14 16 *Qgs - 3.9 - *Qgd - 4.7 - nC V DS =30V , I D =4.5A, V GS =10V Source-Drain Diode SD - 0.75 1.0 V V GS =0V , I S =1.3A S - - 1.3 A SM - - 2.6 A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BV DSS -60 - - V V GS =0, I D =-250μA V GS(th) -1.0 -1.8 -2.5 V V DS GS , I D =-250μA I GSS - - ±100 nA V GS =±20V , V DS - - -1 V DS =-48V , V GS I DSS - - -10 μA V DS =-40V , V GS =0, Tj=55°C - 70 90 V GS =-10V , I D =-3.5A DS(ON) - 93 125 mΩ V GS =-4.5V , I D =-3A FS - 5 - S V DS =-10V , I D =-3.5A Dynamic Ciss - 940 - Coss - 49 - Crss - 35 - pF V DS =-30V , V GS =0, f=1MHz d(ON) - 6 13 ns r - 8 18 d(OFF) - 26 31 f - 11 20 ns V DS =-30V , I D =-1A, V GS =-10V , R G =6Ω *Qg - 10 15 *Qgs - 3 - *Qgd - 3.1 - nC V DS =-30V , I D =-3.5A, V GS =-10V Source-Drain Diode SD - -0.75 -1.0 V V GS =0V , I S =-1.3A S - - -1.3 SM - - -2.6 A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% UM4599

Typical Characteristics : Q1( N-channel ) Typical Output Characteristics 012345 V DS , Drain-Source Voltage(V) I D , Drain Current(A) V GS =3V 10V, 9V, 8V, 7V, 6V, 5V, 4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) BV DSS , Normalized Drain-Source Breakdown Voltage I D =250μA, V GS =0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 I D , Drain Current(A) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) V GS =10V V GS =2.5V V GS =3V V GS =4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR , Reverse Drain Current(A) V SD , Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) R DS(ON) , Normalized Static Drain- Source On-State Resistance V GS =10V, I D =4.5A R DS(ON) @Tj=25°C : 36mΩ typ. V GS , Gate-Source Voltage(V) R DS(ON) , Static Drain-Source On- State Resistance(mΩ) I D =4.5A UM4599

Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 V DS , Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) V GS(th) , Normalized Threshold Voltage I D =250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 I D , Drain Current(A) G FS , Forward Transfer Admittance(S) V DS =10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 1 6 Qg, Total Gate Charge(nC) V GS , Gate-Source Voltage(V) I D =4.5A V DS =48V V DS =30V V DS =12V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-Source Voltage(V) I D , Drain Current(A) DC 10ms 1ms 100 μ s R DS(ON) Limite T A =25°C, Tj=150°C, V GS =10V R θJA =78°C/W,Single Pulse 100m Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 T J , Junction Temperature(°C) I D , Maximum Drain Current(A) T A =25°C, V GS =10V R θJA =78°C/W UM4599

Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics 02468 1 0 1 2 V GS , Gate-Source Voltage(V) I D , Drain Current (A) V DS =10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) T J(MAX) =150°C T A =25°C θ JA =78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t , Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.R θJA (t)=r(t)*R θJA 2.Duty Factor, D=t 3.T JM A DM θJA (t) 4.R θJA =78°C/W UM4599

Typical Characteristics : Q2( P-channel) Typical Output Characteristics 012345 DS , Drain-Source Voltage(V) D , Drain Current (A) V GS =-3V V GS =-4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) -BV DSS , Normalized Drain-Source Breakdown Voltage I D =-250 μ V GS =0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 D , Drain Current(A) R DS(on) , Static Drain-Source On-State Resistance(mΩ) V GS =-4.5V V GS =-3V V GS =-10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 S , Source Drain Current(A) SD , Source-Drain Voltage(V) 1 0 V GS =0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) R DS(on) , Normalized Static Drain-Source On-State Resistance V GS =-10V, I D =-3.5A R DS(ON) @Tj=25°C : 69mΩ typ. GS , Gate-Source Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) I D =-3.5A UM4599

Typical Characteristics(Cont.) : Q2(P-channel) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 DS , Drain-Source Voltage(V) Capacitance---(pF) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) GS(th) , Threshold Voltage(V) I D =-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 D , Drain Current(A) G FS , Forward Transfer Admittance(S) V DS =-10V Pulsed T A =25°C Gate Charge Characteristics 02468 1 0 1 2 Qg, Total Gate Charge(nC) GS , Gate-Source Voltage(V) V DS =-48V I D =-3.5A V DS =-30V V DS =-12V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 D , Drain-Source Voltage(V) D , Drain Current(A) DC 10ms 100m 100μs T A =25°C, Tj=150°C, V GS =-10V θ JA =78°C/W, Single Pulse 1ms R DS(ON) Limited Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) D , Maximum Drain Current(A) T A =25°C, V GS =-10V R θJA =78°C/W UM4599

Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics 02468 1 0 GS , Gate-Source Voltage(V) D , Drain Current (A) V DS =-10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) T J(MAX) =150°C T A =25°C θ JA =78°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t , Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.R θ JA (t)=r(t)*R θJA 2.Duty Factor, D=t 3.T JM A DM θ JA (t) 4.R θJA =50°C/W UM4599