UPA831TC CEL | Alldatasheet
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Technical content
UPA831TCNPN SILICON EPITAXIAL TWIN TRANSISTOR
- SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package
- LOW HEIGHT PROFILE: Just 0.55 mm high
- FLAT LEAD STYLE: Reduced lead inductance improves electrical performance
- TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor
FEATURES
DESCRIPTION
The UPA831TC contains one NE856 and one NE681 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscil- lator/buffer amplifier and other applications. PRELIMINARY DATA SHEET California Eastern Laboratories PART NUMBER UPA831TC PACKAGE OUTLINE TC SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA1 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 140 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 3.0 4.5 Cre Feedback Capacitance 2 at VCB = 3 V, lE = 0, f = 1 MHz pF 0.7 1.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.8 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 150 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 10 12 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. OUTLINE DIMENSIONS (Units in mm) Package Outline TC (TOP VIEW) PIN OUT 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) 0.11+0.1 -0.05 0.20+0.1 -0.05 1.50±0.1 1.10±0.1 1.50±0.1 0.96 0.48 0.48 0.55±0.05 Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current mA PT Total Power Dissipation1 mW TJ Junction Temperature °C TSTG Storage Temperature °C 20 20 12 10 3 1.5 100 65 TBD TBD ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) Note: 1. Operation in excess of any one of these parameters may result in permanent damage. UPA831TC TBD 150 150 -65 to +150 PART NUMBER QUANTITY PACKAGING UPA831TC-T1 3000 Tape & Reel
ORDERING INFORMATION
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 1/99DATA SUBJECT TO CHANGE WITHOUT NOTICE