PS9905-Y-V-AX

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Technical content

81 fo 1 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. teehS ataD PS9905

2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 8-PIN LSDIP PHOTOCOUPLER

FOR CREEPAGE DISTANCE OF 14.5 mm

DESCRIPTION

The PS9905 is optically coupled isolator containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.

FEATURES

• Long creepage distance (14.5 mm MIN.)
• Large peak output current (2.5 A MAX., 2.0 A MIN.)
• High speed switching (tPLH, tPHL = 0.15 μs MAX.)
• UVLO (Under Voltage Lock Out) protection with hysteresis
• High common mode transient immunity (CMH, CML = ±25 kV/μs MIN.)
• 8-pin LSDIP (Long Creepage SDIP) type
• Embossed tape product: PS9905-F3: 1 000 pcs/reel
• Pb-Free Product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved: No. 1122994
• DIN EN60747-5-5 (VDE0884-5): 2011-11 approved: No. 40034588 (Option)

APPLICATIONS

• IGBT, Power MOS FET Gate Driver
• Industrial inverter
• Solar inverter R08DS0058EJ0100 Rev.1.00 Jun 11, 2012 PIN CONNECTION (Top View) 1. NC 2. Anode 3. Cathode 4. NC 5. V EE 6. NC 7. VO 8. VCC 1 2 3 4 8 7 6 5 SHIELD <R> A Business Par tner of Renesas Electronics Corporation.

81 fo 2 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 PACKAGE DIMENSIONS (UNIT: mm) PHOTOCOUPLER CONSTRUCTION ).NIM( tinU retemaraP mm 5.41 ecnatsiD riA mm 5.41 ecnatsiD egapeerC retuO mm 4.0 ecnatsiD noitalosI 16.7±0.4 0.8±0.25 0.2±0.15 0.25±0.15 3.5±0.2 3.7±0.25 1.27 0.5±0.1 0.25 M 6.7±0.3 13.8±0.3 A Business Par tner of Renesas Electronics Corporation.

81 fo 3 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 FUNCTIONAL DIAGRAM LED Output HNO OFF Tr. 1 ON OFF Tr. 2 OFF ON L Input H L (Tr. 2) (Tr. 1) SHIELD MARKING EXAMPLE 9905 R N231 2N 31 No. 1 pin Mark Year Assembled (Last 1 Digit) Rank Code Week Assembled Assembly Lot Type Number Company Initial A Business Par tner of Renesas Electronics Corporation.

81 fo 4 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012

ORDERING INFORMATION

Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number*1 )tuc scp 01 epaT( scp 01 XA-Y-5099SP 5099SP PS9905-F3 PS9905-Y-F3-AX Embossed Tape 1 000 leer/scp Standard products (UL, CSA, SEMKO approved) PS9905-V PS9905-Y-V-AX 10 pcs (Tape 10 pcs cut) PS9905-V-F3 PS9905-Y-V-F3-AX Embossed Tape 1 000 Pb-Free (Ni/Pd/Au) pcs/reel DIN EN60747-5-5 (VDE0884-5): 2011-11 approved (Option) PS9905 Note: *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit I tnerruC drawroF edoiD F 25 mA Peak Transient Forward Current (Pulse Width < 1 μs) IF (TRAN) 1.0 A Reverse Voltage VR 5 V Power Dissipation*1, *6 PD 45 mW Detector High Level Peak Output Current*2 IOH (PEAK) 2.5 A Low Level Peak Output Current*2 IOL (PEAK) 2.5 A Supply Voltage (VCC - VEE) 0 to 35 V V egatloV tuptuO O 0 to VCC V Power Dissipation*3, *6 PC 250 mW Isolation Voltage *4 .s.m.rV 005 7 VB Operating Frequency *5 zHk 05 f Operating Ambient Temperature TA −40 to +110 °C T erutarepmeT egarotS stg −55 to +125 °C Notes: *1. Derating to be set after 0.8 mW/°C at TA = 85°C or more. *2. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2 % *3. Reduced to 5.2 mW/°C at TA = 85°C or more *4. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-4 shorted together, 5-8 shorted together. *6. Mounted on glass epoxy substrate of 75 mm × 115 mm × t1.5 mm RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit V( egatloV ylppuS CC - VEE) 15 30 V Forward Current (ON) IF (ON) 10 12 14 mA Forward Voltage (OFF) VF (OFF) −2 0.8 V Operating Ambient Temperature TA −40 110 °C <R> <R> A Business Par tner of Renesas Electronics Corporation.

81 fo 5 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012

ELECTRICAL CHARACTERISTICS

(VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Diode Forward Voltage VF IF = 10 mA, TA = 25°C 1.3 1.56 1.8 V Reverse Current IR VR = 3 V, TA = 25°C 10 μA Terminal Capacitance Ct f = 1 MHz, VF = 0 V, TA = 25°C 30 pF Detector High Level Output Current IOH VO = (VCC − 4 V) *2 0.5 2.0 A V O = (VCC − 15 V) *3 2.0 Low Level Output Current IOL VO = (VEE + 2.5 V) *2 0.5 2.0 A V O = (VEE + 15 V) *3 2.0 High Level Output Voltage VOH IO = −100 mA *4 VCC − 3.0 VCC − 1.5 V Low Level Output Voltage VOL IO V 5.0 1.0 Am 001 = High Level Supply Current ICCH VO = open, IF = 12 mA 1.4 3.0 mA Low Level Supply Current ICCL VO = open, VF = −2 to +0.8 V 1.3 3.0 mA UVLO Threshold VUVLO+ VO > 5 V, IF = 12 mA 10.8 12.3 13.4 V V UVLO− 5.21 0.11 5.9 UVLO Hysteresis UVLOHYS VO > 5 V, IF = 12 mA 0.4 1.3 V Coupled Threshold Input Current (L → H) IFLH IO = 0 mA, VO > 5 V 2.9 6.0 mA Threshold Input Voltage (H → L) VFHL IO = 0 mA, VO < 5 V 0.8 V Notes: *1. Typical values at TA = 25°C *2. Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%. *3. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%. *4. VOH is measured with the DC load current in this testing (Maximum pulse width = 2 ms, Maximum duty cycle = 20%). A Business Par tner of Renesas Electronics Corporation.

81 fo 6 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 SWITCHING CHARACTERISTICS (VEE = GND, unless otherwise specified and refer to RECOMMENDED OPERATING CONDITIONS) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Propagation Delay Time (L → H) tPLH Rg = 10 Ω, Cg = 10 nF*2, f = 10 kHz, 0.09 0.15 μs Propagation Delay Time (H → L) tPHL Duty Cycle = 50%, IF = 12 mA 0.1 0.15 μs Pulse Width Distortion (PWD) |tPHL−tPLH 570.0 10.0 | μs Propagation Delay Time (Difference Between Any Two Products) tPHL−tPLH −0.1 0.1 μs t emiT esiR r sn 05 t emiT llaF f sn 05 UVLO (Turn On Delay) tUVLO ON VO > 5 V, IF = 12 mA 0.8 μs UVLO (Turn Off Delay) tUVLO OFF VO < 5 V, IF = 12 mA 0.6 μs Common Mode Transient Immunity at High Level Output |CMH| TA = 25°C, IF = 12 mA, VCC = 30 V, VO (MIN.) = 26 V, VCM = 1.5 kV 25 kV/μs Common Mode Transient Immunity at Low Level Output |CML| TA = 25°C, IF = 0 mA, VCC = 30 V, VO (MAX.) = 1 V, VCM = 1.5 kV 25 kV/μs Notes: *1. Typical values at TA = 25°C *2. This load condition is equivalent to the IGBT load at 1 200 V / 75 A. <R> A Business Par tner of Renesas Electronics Corporation.

81 fo 7 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 TEST CIRCUIT Fig. 1 IOH I 2 .giFtiucriC tseT OL Test Circuit Fig. 3 VOH V 4 .giFtiucriC tseT OL Test Circuit Fig. 5 IFLH tiucriC tseT OLVU 6 .giFtiucriC tseT VCC = 15 to 30 V2.5 V0.1 Fμ IOL IF 0.1 Fμ VO > 5 V IF = 12 mA VCC 0.1 Fμ VO > 5 V IF = 10 to 14 mA VCC = 15 to 30 V0.1 Fμ VOH 100 mA

0.1 FμIF =

VCC = 15 to 30 V0.1 Fμ VOL 100 mA SHIELD SHIELD SHIELD SHIELD SHIELD SHIELD (VCC-4)V VCC = 15 to 30 V VCC = 15 to 30 V <R> A Business Par tner of Renesas Electronics Corporation.

81 fo 8 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 VCC = 15 to 30 VIF = 12 mA 10 kHz 50% DUTY CYCLE 0.1 Fμ VO 500 Ω 10 Ω 10 nF tPHLtPLH IF VOUT 90% 50% 10% tr tf VCC = 30 V VCM = 1.5 kV 0.1 Fμ A B VO IF VOH 26 V 1 V VOL VCM 0 V VO (Switch A: IF = 12 mA) VO (Switch B: IF = 0 mA) Fig. 7 tPLH, tPHL, tr, tf Test Circuit and Wave Forms Fig. 8 CMR Test Circuit and Wave Forms Δt =δV δ t VCM Δt SHIELD SHIELD + − A Business Par tner of Renesas Electronics Corporation.

81 fo 9 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) Ambient Temperature TA (°C) Diode Power Dissipation PD (mW) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Detector Power Dissipation PC (mW) DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Threshold Input Current IFLH (mA) THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE 20 40 60 80 1201000 20 40 60 80 1201000 300 250 200 150 100 6.0 5.0 4.0 3.0 2.0 1.0 −40 −20 0 20 40 60 80 100 Forward Current IF (mA) Output Voltage VO (V) OUTPUT VOLTAGE vs. FORWARD CURRENT 10 2 4 63 5 Forward Voltage V F (V) Forward Current IF (mA) FORWARD CURRENT vs. FORWARD VOLTAGE 0.01 0.1 100 1.5 2 TA = +110°C +100°C +85°C +50°C +25°C −20°C −40°C High Level Output Voltage – Supply Voltage VOH – VCC (V) High Level Output Current IOH (A) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT −40°C +25°C VCC = 30 V, VEE = GND, VO > 5 V TA = 25°C, VCC = 30 V, VEE = GND VCC = 30 V, VEE = GND, IF = 12 mA TA = +110°C 2.4 Remark The graphs indicate nominal characteristics. <R> A Business Par tner of Renesas Electronics Corporation.

81 fo 01 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 Forward Current IF (mA) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. FORWARD CURRENT PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. SUPPLY VOLTAGESupply Voltage VCC (V) Low Level Output Current IOL (A) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. LOW LEVEL OUTPUT CURRENT Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) 6 8 10 12 14 16 18 150 100 15 20 25 30 150 100 PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD CAPACITANCE Load Capacitance Cg (nF) 10 20 30 40 50 150 100 PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. LOAD RESISTANCE 0 10 20 30 40 50 150 100 Load Resistance Rg (Ω) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) 0−40 −20 20 40 60 80 150 100 0 100 −40°C +25°C VCC = 30 V, VEE = GND, IF = 0 mA TA = +110°C TA = 25°C, IF = 12 mA, VCC = 30 V, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% PWD tPLH tPHL IF = 12 mA, VCC = 30 V, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% PWD tPLH tPHL TA = 25°C, IF = 12 mA, VCC = 30 V, Rg = 10 Ω, f = 10 kHz, Duty cycle = 50% PWD tPLH tPHL TA = 25°C, IF = 12 mA, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% PWD tPLH tPHL TA = 25°C, VCC = 30 V, Rg = 10 Ω, Cg = 10 nF, f = 10 kHz, Duty cycle = 50% PWD tPLH tPHL Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

81 fo 11 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 Ambient Temperature TA (°C) SUPPLY CURRENT vs. AMBIENT TEMPERATURE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) −20 0 20 40 8060−40 2.0 1.5 1.0 0.5 100 Ambient Temperature TA (°C) Supply Voltage VCC (V) SUPPLY CURRENT vs. SUPPLY VOLTAGE High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) 030251 25 2.0 0.5 1.0 1.5 High Level Output Voltage – Supply Voltage VOH – VCC (V) HIGH LEVEL OUTPUT VOLTAGE – SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE −20 0 20 40 8060−40 0.0 −3.0 −2.5 −2.0 −1.5 −1.0 −0.5 100 −20 0 20 40 8060− 00104 Ambient Temperature TA (°C) High Level Output Current IOH (A) HIGH LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE 0.30 0.00 0.05 0.10 0.15 0.20 0.25 Ambient Temperature T A (°C) Low Level Output Current IOL (A) LOW LEVEL OUTPUT CURRENT vs. AMBIENT TEMPERATURE −20 0 20 40 8060− 00104 3.0 0.0 0.5 1.0 1.5 2.0 2.5 −20 0 20 40 8060− 00104 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V CC = 30 V, VEE = GND, IF = 12 mA, IO = –100 mA VCC = 30 V, VEE = GND, IF = 12 mA, VCC–VO = 4 V VCC = 30 V, VEE = GND, IF = 0 mA, VO = 2.5 V VCC = 30 V, VEE = GND, IF = 0 mA, IO = 100 mA VCC = 30 V, VEE = GND, VO = OPEN ICCL (IF = 0 mA) ICCH (IF = 12 mA) TA = 25°C, VEE = GND, VO = OPEN ICCH (IF = 12 mA) ICCL (IF = 0 mA) Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

81 fo 21 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 OUTPUT VOLTAGE vs. SUPPLY VOLTAGE Supply Voltage VCC – VEE (V) Output Voltage VO (V) 0 5 10 15 20 TA = 25°C, IF = 12 mA VUVLO+ (12.3 V) UVLOHYS VUVLO+ (12.3 V) VUVLO– (11.0 V) Remark The graphs indicate nominal characteristics. A Business Par tner of Renesas Electronics Corporation.

81 fo 31 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 TAPING SPECIFICATIONS (UNIT: mm) Tape Direction Outline and Dimensions (Reel) Packing: 1 000 pcs/reel 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 25.5±1.0 29.5±1.0 PS9905-F3 2.0±0.1 4.0±0.1 1.75±0.1 24.0±0.3 1.5 +0.1 –0 4.5 MAX. (17.2) (0.3) 11.5±0.1 Outline and Dimensions (Tape) (7.2) (4.05) 12.0±0.1 2.0±0.2 A Business Par tner of Renesas Electronics Corporation.

81 fo 41 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) 0.91.27 16.6 A Business Par tner of Renesas Electronics Corporation.

81 fo 51 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering 062 erutarepmet wolfer kaeP • °C or below (package surface temperature)

• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s eerhT swolfer fo rebmuN • tnuoma llams gniniatnoc xulf nisoR xulF • of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C (2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less fo tnuoma llams gniniatnoc xulf nisoR xulF • chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead A Business Par tner of Renesas Electronics Corporation.

81 fo 61 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 (4) Cautions

• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. Board designing (1) By-pass capacitor of more than 0.1 μF is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. (2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close to the input block pattern of the photocoupler. If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the range of the recommended operating conditions, and be sure to thoroughly evaluate operation.) (3) Pin 1, 4 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open. Also, Pin 6 (which is an NC*1 pin) can either be connected directly to the GND pin on the detector side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. Note: *1. NC: Non-Connection (No Connection) 3. Make sure the rise/fall time of the forward current is 0.5 μs or less. 4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/μs or less. 5. Avoid storage at a high temperature and high humidity. A Business Par tner of Renesas Electronics Corporation.

81 fo 71 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT tinU .cepS lobmyS retemaraP Climatic test class (IEC 60068- 12/011/04 )1-86006 NE NID/1 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 × UIORM., Pd < 5 pC UIORM Upr 1 600 2 560 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 × UIORM., Pd < 5 pC Upr 3 000 Vpeak U egatlovrevo elbissimrep tsehgiH TR 12 000 Vpeak 2 )1 traP 0110EDV 1-46606 NE NID( noitullop fo eergeD Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (DIN EN 60664 a III )1 traP 0110EDV 1- T egnar erutarepmet egarotS stg –55 to +125 °C T egnar erutarepmet gnitarepO A –40 to +110 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25°C VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. Ris MIN. 1012 1011 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 175 400 700 mA mW Ω <R> A Business Par tner of Renesas Electronics Corporation.

81 fo 81 egaP 00.1.veR 0010JE8500SD80R Jun 11, 2012 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth. A Business Par tner of Renesas Electronics Corporation.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Rev. Date Page Summary

0.01 Apr 06, 2012 − First edition issued

1.00 Jun 11, 2012 Throughout Preliminary Data Sheet → Data Sheet

p.1 Modification of FEATURES p.4 Modification of ORDERING INFORMATION p.5 Modification of ABSOLUTE MAXIMUM RATINGS p.6 Modification of SW ITCHING CHARACTERISTICS pp.7, 8 Modifica tion of TEST CIRCUIT pp.9 to 12 Addition of TYPICAL CHARACTERISTICS p.17 Addition of SPECIFICATION OF VDE MARKS LICENSE DOCUMENT