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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

  • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package
  • LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz
  • HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz
  • HIGH GAIN BANDWIDTH: fT = 7 GHz
  • LOW CURRENT OPERATION FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06

DESCRIPTION

The UPA812T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation

1 Die mW 110

2 Die mW 200

TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. T218APUREBMUN TRAP 60SENILTUO EGAKCAP SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 μ 8.0A IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 μ 8.0A hFE1 Forward Current Gain at VCE = 3 V, IC 04200107Am 7 = fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 Cre2 Feedback Capacitance at VCB = 3 V, IE 9.0FpzHM 1 = f ,0 = |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 10 12 NF Noise Figure at VCE = 3 V, IC 7.14.1BdzHG 1 = f ,Am 7 = hFE1/hFE2 hFE 58.0:oitaR ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA812T-T1, 3K per reel. Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 3 4 0.2 (All Leads) +0.10 - 0.05 (Top View)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Total Power Dissipation, P T (mW) Ambient Temperature, TA (°C) Collector to Emitter Voltage, VCE (V) Collector Current, I C (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage, VBE (V) Collector Current, I C (mA) TYPICAL PERFORMANCE CURVES (TA = 25°C) DC Current Gain, h FE DC CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, IC (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Feddback Capacitance, C RE (pF) Collector to Base Voltage, VCB (V) Collector Current, IC (mA) Gain Bandwidth Product, f T (GHz) UPA812T 200 100 0 50 100 150

2 Elements in Total

0 0.5 1.0 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA lB=20 µA 0 0.5 1.0 VCE = 3 V 200 100 0.5 5 15 0 10 VCE = 3 V 5.0 2.0 1.0 0.5 0.2 0.1 15 25 0 10 20 f = 1 MHz 0.5 5 15 0 10 VCE = 3 V f = 1 GHz

Collector Current, lC (mA) )Bd( FN ,erugiF esioN INSERTION POWER GAIN vs. FREQUENCY SI ,niaG rewoP noitresnI e12 )Bd( INSERTION POWER GAIN vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT Frequency, f (GHz) TYPICAL PERFORMANCE CURVES (TA = 25°C) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -1/99DATA SUBJECT TO CHANGE WITHOUT NOTICE PART NUMBER QUANTITY PACKAGING UPA812T-T1-A 3000 Tape & Reel

ORDERING INFORMATION

Collector Current, lC (mA) SI ,niaG rewoP noitresnI e12 )Bd( 55.0 051 10 VCE = 3 V f = 1 GHz VCE = 3 V lc = 7 mA 0.55.0 050.1 10 VCE = 3 V f = 1 GHz