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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
- LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
- HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
- EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
- HIGH COLLECTOR CURRENT: 100 mA FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View)
DESCRIPTION
The UPA810T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. PRELIMINARY DATA SHEET Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 3 4 0.2 (All Leads) - 0.05 Date Published: June 28, 2005 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. T018APUREBMUN TRAP 60SENILTUO EGAKCAP SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 μ 0.1A IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 μ 0.1A hFE1 Forward Current Gain at VCE = 3 V, IC 05202107Am 7 = fT Gain Bandwidth at VCE = 3 V, IC = 7 mA GHz 3.0 4.5 Cre2 Feedback Capacitance at VCB = 3 V, IE 5.17.0FpzHM 1 = f ,0 = |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9 NF Noise Figure at VCE = 3 V, IC 5.22.1BdzHG 1 = f ,Am 7 = hFE1/hFE2 hFE 58.0:oitaR ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA810T-T1, 3K per reel. hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 100 PT Total Power Dissipation
1 Die mW 110
2 Die mW 200
TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. PART NUMBER QUANTITY PACKAGING UPA810T Loose Products (50 pcs) Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter) face to perforation side of tape UPA810T-T1 Taping products (3 KPCS/Reel) ORDERING INFORMATION (Solder Contains Lead) PART NUMBER QUANTITY PACKAGING UPA810T-A Loose Products (50 pcs) Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter) face to perforation side of tape UPA810T-T1-A Taping products (3 KPCS/Reel) ORDERING INFORMATION (Pb-Free) UPA810T