UPA808T-T1-A

UPA808T CEL | Alldatasheet

Document overview

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Technical content

• SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz
• LOW CURRENT OPERATION FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View)

DESCRIPTION

NEC's UPA808T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high f T, low voltage bias and small size make this device suited for various hand-held wireless applications. PART NUMBER UPA808T PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE1 Forward Current Gain at VCE = 2 V, IC = 20 mA 70 100 140 fT Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz 9 11 Cre2 Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz pF 0.4 0.8 |S21E|2 Insertion Power Gain at VCE = 2 V, IC =20 mA, f = 2 GHz dB 7 8.5 NF Noise Figure at V CE = 2 V, IC = 3 mA, f = 2 GHz dB 1.3 2 hFE1/hFE2 hFE Ratio: 0.85 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808T-T1, 3K per reel. Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 California Eastern Laboratories hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 3 4 0.2 (All Leads) +0.10 - 0.05

TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, P T (mW) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, lc (mA) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain,h FE Collector Current, lc (mA) 200 100 0 50 100 150

2 Elements in Total

0 0.5 1.0 VCE = 2 V 0 1.0 2.0 3.0 lB = 20 µA 40 µA 60 µA 80 µA 100 µA 120 µA 140 µA 160 µA 180 µA 200 µA 500 200 100 1 2 5 10 20 50 100 VCE = 2 V VCE = 1 V ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation

1 Die mW 90

2 Die mW 180

T J Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. UPA808T

TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, f T (GHz) Collector Current, lc (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S 21E (dB) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, C RE (pF) Collector to Base Voltage, VCB (V) 12 3 5 7 1 0 f = 2 GHz VCE = 1 V VCE = 2 V 12 3 5 7 10 f = 2 GHz VCE = 1 V VCE = 2 V 12 3 5 7 1 0 f = 2 GHz VCE = 2 V VCE = 1 V 0.8 0.6 0.4 0.2 f = 1 MHz PART NUMBER QUANTITY PACKAGING UPA808T-T1-A 3000 Tape & Reel

ORDERING INFORMATION

UPA808T(Q1) VCE = 1 V, IC = 1 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) TYPICAL SCATTERING PARAMETERS (TA = 25°C) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| UPA808T UPA808T(Q2) VCE = 1 V, IC = 1 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

UPA808T(Q1) VCE = 2 V, IC = 3 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) TYPICAL SCATTERING PARAMETERS (TA = 25°C) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| UPA808T(Q2) VCE = 2 V, IC = 3 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

UPA808T(Q1) VCE = 2 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) TYPICAL SCATTERING PARAMETERS (TA = 25°C) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| UPA808T(Q2) VCE = 2 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

UPA808T(Q1) VCE = 3 V, IC = 3 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) TYPICAL SCATTERING PARAMETERS (TA = 25°C) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| UPA808T(Q2) VCE = 3 V, IC = 3 mA FREQUENCY S 11 S21 S12 S22 K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

Frequency: 0.1 to 3.0 GHz Bias: V CE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 10/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. Parameters Q1, Q2 Parameters Q1, Q2 IS 8e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1 CJS 0 VAF 17 VJS 0.75 IKF 0.18 MJS 0 ISE 3.3e-15 FC 0.37 NE 1.48 TF 6e-12 BR 9.05 XTF 11.9 NR 1.05 VTF 9.55 VAR 4.3 ITF 1.78 IKR 0.009 PTF 69.1 ISC 4e-15 TR 1e-9 NC 1.5 EG 1.11 RE 0.8 XTB 0 RB 11.1 XTI 3 RBM 2.46 KF 0 IRB 0.017 AF 1 RC 7.5 CJE 0.415e-12 VJE 0.68 MJE 0.53 CJC 0.102e-12 VJC 0.29 (1) Gummel-Poon Model BJT NONLINEAR MODEL PARAMETERS (1) NONLINEAR MODEL

EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM 8/99DATA SUBJECT TO CHANGE WITHOUT NOTICE NONLINEAR MODEL SCHEMATIC MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: V CE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 10/98 Pin_1 Pin_2 Pin_3 Pin_4 Pin_5 Pin_6 0.07 pF CCEPKG2 CCBPKG2 0.7 nH 0.26 pF CCE2 CCB2 0.26 pF CCE1 0.19 pF 0.95 nH 0.45 nH 0.05 nH 0.8 nH CCBPKG1 CCB1 LE1 LB1 LB 0.05 nH LB 0.05 nH LE C_B2E2 0.05 pF C_B1B2 0.05 pF LB2 LE2 C_C1B2 0.1 pF LC 0.05 nH LC 0.05 nH LE 0.05 nH C_E1C2 C_C1E1 0.05 pF 0.05 pF C_E1B2 0.1 pF 0.1 pF 0.06 pF 0.19 pF Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.

4590 Patrick Henry Drive

Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A -AZLead (Pb) < 1000 PPM Not Detected (*) Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway t o better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.