UPA806T-T1-A

UPA806T CEL | Alldatasheet

Document overview

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Technical content

• SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 12 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View)

DESCRIPTION

NEC's UPA806T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high f T, low voltage bias and small size make this device suited for various hand-held wireless applications. PART NUMBER UPA806T PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE1 Forward Current Gain at VCE = 3 V, IC = 10 mA 75 100 150 fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12 Cre2 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 7 8.5 NF Noise Figure at V CE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 2.5 hFE1/hFE2 hFE Ratio: 0.85 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA806T-T1, 3K per reel. Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 h FE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 California Eastern Laboratories 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 3 4 0.2 (All Leads) +0.10 - 0.05

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) Note: 1. Operation in excess of any one of these parameters may result in permanent damage. SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation

1 Die mW 110

2 Die mW 200

T J Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 PART NUMBER QUANTITY PACKAGING UPA806T-T1-A 3000 Tape & Reel

ORDERING INFORMATION

INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, 21E (dB) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) 2 5 10 20 500.5 f = 2 GHz 5 V 3 V VCE = 1 V 12 5 1 0 2 0 5 00.5 VCE = 3 V f = 2 GHz COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, h FE Collector Current, lc (mA) 01 2 3 4 5 6 500 µA 400 µA 300 µA 200 µA lB=100 µA 200 100 12 51 0 2 0 5 00.1 0.2 0.5 100 5 V VCE = 3 V TYPICAL PERFORMANCE CURVES

FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, C re (pF) 0.6 0.5 0.4 0.3 0.2 12 5 1 0 2 00.5 f = 1 MHz GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, f T (GHz) 12 5 1 0 2 0 5 00.5 5 V 3 V f = 2 GHz VCE = 1 V Collector Current, lc (mA) Total Power Dissipation, P T (mW) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, lc (mA) Base to Emitter Voltage, VBE (V) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 0 50 100 150 Free Air 2 elements in total Q1 when using 1 element Q1 when using 2 elements 0 0.5 1.0 VCE = 3 V Collector to Base Voltage, VCB (V) TYPICAL PERFORMANCE CURVES UPA806T

TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA806T(Q1) VCE = 1 V, IC = 1 mA FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA806T(Q2) V CE = 1 V, IC = 1 mA FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21|

TYPICAL SCATTERING PARAMETERS (TA = 25°C) FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA806T(Q1) VCE = 2 V, IC = 5 mA UPA806T(Q2) V CE = 2 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21|

TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA806T(Q1) VCE = 2 V, IC = 10 mA FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA806T(Q2) V CE = 2 V, IC = 10 mA FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21|

TYPICAL SCATTERING PARAMETERS (TA = 25°C) FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA806T(Q1) VCE = 3 V, IC = 10 mA UPA806T(Q2) V CE = 3 V, IC = 10 mA FREQUENCY S 11 S21 S12 S22 K Gmag (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) MAG = Maximum Available Gain MSG = Maximum Stable Gain Note: 1. Gain Calculation: MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21|

(1) Gummel-Poon Model Parameters Q1 & Q2 Parameters Q1 & Q2 IS 7e-16 MJC 0.34 BF 109 XCJC 0 NF 1 CJS 0 VAF 15 VJS 0.75 IKF 0.19 MJS 0 ISE 7.9e-13 FC 0.5 NE 2.19 TF 3e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.01 IKR Infinity PTF 0 ISC 0 TR 1e-9 NC 2 EG 1.11 RE 1.3 XTB 0 RB 10 XTI 3 RBM 8.34 KF 0 IRB 0.009 AF 1 RC 10 CJE 0.4e-12 VJE 0.81 MJE 0.5 CJC 0.18e-12 VJC 0.75 BJT NONLINEAR MODEL PARAMETERS(1) UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: V CE =0.5 V to 5 V, IC = 1 mA to 10 mA Date: 10/98 NONLINEAR MODEL UPA806T Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.

Frequency: 0.1 to 3.0 GHz Bias: V CE = 0.5 V to 5 V, IC = 1 mA to 10 mA Date: 10/98 UPA806T Pin_1 Pin_2 Pin_3 Pin_4 Pin_5 Pin_6 0.07 pF CCEPKG2 CCBPKG2 0.9 nH 0.14 pF CCE2 CCB2 0.14 pF CCE1 0.13 pF 1.1 nH 0.55 nH 0.05 nH 1.0 nH CCBPKG1 CCB1 LE1 LB1 LB 0.05 nH LB 0.05 nH LE C_B2E2 0.05 pF C_B1B2 0.05 pF LB2 LE2 C_C1B2 0.1 pF LC 0.05 nH LC 0.05 nH LE 0.05 nH C_E1C2 C_C1E1 0.05 pF 0.05 pF C_E1B2 0.1 pF 0.1 pF 0.06 pF 0.13 pF EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98DATA SUBJECT TO CHANGE WITHOUT NOTICE Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.

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Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A -AZLead (Pb) < 1000 PPM Not Detected (*) Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway t o better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.