UPA800T

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

• SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View)

DESCRIPTION

The UPA800T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications. T008APUREBMUN TRAP 60SENILTUO EGAKCAP SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 μ 0.1A IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 μ 0.1A hFE1 Forward Current Gain at VCE = 3 V, IC 00202108Am 5 = fT Gain Bandwidth at VCE = 3 V, IC = 5 mA GHz 5.5 8.0 Cre2 Feedback Capacitance at VCB = 3 V, IE 7.03.0FpzHM 1 = f ,0 = |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 5.5 7.5 NF Noise Figure at VCE = 3 V, IC 2.39.1BdzHG 2 = f ,Am 5 = ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1.Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA800T-T1, 3K per reel.. Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 3 4 0.2 (All Leads) +0.10 - 0.05

Note: 1. Operation in excess of any one of these parameters may result in permanent damage. SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 PT Total Power Dissipation

1 Die mW 110

2 Die mW 200

TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PART NUMBER QUANTITY PACKAGING UPA800T-T1-A 3000 Tape & Reel

ORDERING INFORMATION

UPA800T ( Q1) VCE = .5V, IC = .5mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V C E = .5V, IC = .5mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T (Q1) VCE = 1V, IC = 1mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V CE = 1V, IC = 1mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS S22

0.25 GHz

5 GHz

1.5 -1.5 -1-0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 S21 0.1 0.2 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 1 mA, hFE = 112 MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T (Q1) VCE = 2 V, IC = 5 mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V CE = 2 V, IC = 5 mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T (Q1) VCE = 3V, IC = 10 mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V CE = 3V, IC = 10 mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS 1.5 -1.5 -1-0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 S11 10.00 0.25 VCE = 3 V, IC = 10 mA hFE = 112 MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T2 (Q2) VCE = 5V, IC = 10 mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q1) V CE = 5 V, IC = 10 mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

(1) Gummel-Poon Model Parameters Q1, Q2 Parameters Q1, Q2 IS 3.84e-16 MJC 0.5 BF 124.9 XCJC 0 NF 1.04 CJS 0 VAF 11.87 VJS 0.75 IKF 0.027 MJS 0 ISE 1e-14 FC 0.5 NE 2.17 TF 10e-12 BR 1.0 XTF 18.0 NR 1.05 VTF 19.12 VAR Infinity ITF 0.082 IKR Infinity PTF 0 ISC 0 TR 0.635e-9 NC 2.0 EG 1.11 RE 0.6 XTB 0 RB 17.88 XTI 3 RBM 1.02 KF 0 IRB 4.01e-4 AF 1 RC 10.46 CJE 0.358e-12 VJE 0.711 MJE 0.5 CJC 0.21e-12 VJC 0.791 BJT NONLINEAR MODEL PARAMETERS(1) UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: V CE =0.5 V to 5 V, IC = 0.5 mA to 10 mA Date: 10/98 UPA800T NONLINEAR MODEL

Frequency: 0.1 to 3.0 GHz Bias: VCE =0.5 V to 5 V, IC = 0.5 mA to 10 mA Date: 10/98 Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 0.07 pF CCEPKG2 CCBPKG2 0.5 nH 0.12 pF CCE2 CCB2 0.12 pF CCE1 0.06 pF 1.05 nH 0.4 nH 0.05 nH 1.0 nH CCBPKG1 CCB1 LE1 BL1BL 0.05 nH LB 0.05 nH LE C_B2E2 0.05 pF C_B1B2 0.05 pF LB2 LE2 C_C1B2 0.1 pF LC 0.05 nH LC 0.05 nH LE 0.05 nH C_E1C2 C_C1E1 0.05 pF 0.5 pF C_E1B2 0.1 pF 0.1 pF 0.06 pF 0.06 pF UPA800T NONLINEAR MODEL EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98DATA SUBJECT TO CHANGE WITHOUT NOTICE