UPA800T CEL | Alldatasheet

Document overview

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Technical content

  • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package
  • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz
  • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz
  • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View)

DESCRIPTION

NEC's UPA800T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high f T, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications. PART NUMBER UPA800T PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE1 Forward Current Gain at VCE = 3 V, IC = 5 mA 80 120 200 fT Gain Bandwidth at VCE = 3 V, IC = 5 mA GHz 5.5 8.0 Cre2 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.3 0.7 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 5.5 7.5 NF Noise Figure at V CE = 3 V, IC = 5 mA, f = 2 GHz dB 1.9 3.2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA800T-T1, 3K per reel.. Note: Pin 3 is identified with a circle on the bottom of the package. PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 California Eastern Laboratories 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.15 0.9 ± 0.1 0.7 2.0 ± 0.2 0.65 1.3 3 4 0.2 (All Leads) +0.10 - 0.05

Note: 1. Operation in excess of any one of these parameters may result in permanent damage. SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 PT Total Power Dissipation

1 Die mW 110

2 Die mW 200

TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PART NUMBER QUANTITY PACKAGING UPA800T-T1-A 3000 Tape & Reel

ORDERING INFORMATION

UPA800T ( Q1) VCE = .5V, IC = .5mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V C E = .5V, IC = .5mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T (Q1) VCE = 1V, IC = 1mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V CE = 1V, IC = 1mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS S22

0.25 GHz

5 GHz

1.5 -1.5 -1-0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 S21 0.1 0.2 Coordinates in Ohms Frequency in GHz VCE = 1 V, IC = 1 mA, hFE = 112 MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T (Q1) VCE = 2 V, IC = 5 mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V CE = 2 V, IC = 5 mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T (Q1) VCE = 3V, IC = 10 mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q2) V CE = 3V, IC = 10 mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS 1.5 -1.5 -1-0.8 -0.6 -0.4 -0.2 0.2 0.4 0.6 0.8 S11 10.00 0.25 VCE = 3 V, IC = 10 mA hFE = 112 MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

UPA800T2 (Q2) VCE = 5V, IC = 10 mA, CE; hFE = 107 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T (Q1) V CE = 5 V, IC = 10 mA, CE; hFE = 112 Frequency S 11 S21 S12 S22 K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB) UPA800T TYPICAL SCATTERING PARAMETERS MAG = |S21| |S12| K - 1 ).2(K ± ∆ = S11 S22 - S21 S12 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| 2 |S12 S21| Note: 1. Gain Calculations: MAG = Maximum Available Gain MSG = Maximum Stable Gain

(1) Gummel-Poon Model Parameters Q1, Q2 Parameters Q1, Q2 IS 3.84e-16 MJC 0.5 BF 124.9 XCJC 0 NF 1.04 CJS 0 VAF 11.87 VJS 0.75 IKF 0.027 MJS 0 ISE 1e-14 FC 0.5 NE 2.17 TF 10e-12 BR 1.0 XTF 18.0 NR 1.05 VTF 19.12 VAR Infinity ITF 0.082 IKR Infinity PTF 0 ISC 0 TR 0.635e-9 NC 2.0 EG 1.11 RE 0.6 XTB 0 RB 17.88 XTI 3 RBM 1.02 KF 0 IRB 4.01e-4 AF 1 RC 10.46 CJE 0.358e-12 VJE 0.711 MJE 0.5 CJC 0.21e-12 VJC 0.791 BJT NONLINEAR MODEL PARAMETERS(1) UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: V CE =0.5 V to 5 V, IC = 0.5 mA to 10 mA Date: 10/98 UPA800T NONLINEAR MODEL

Frequency: 0.1 to 3.0 GHz Bias: V CE =0.5 V to 5 V, IC = 0.5 mA to 10 mA Date: 10/98 Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 0.07 pF CCEPKG2 CCBPKG2 0.5 nH 0.12 pF CCE2 CCB2 0.12 pF CCE1 0.06 pF 1.05 nH 0.4 nH 0.05 nH 1.0 nH CCBPKG1 CCB1 LE1 LB1 LB 0.05 nH LB 0.05 nH LE C_B2E2 0.05 pF C_B1B2 0.05 pF LB2 LE2 C_C1B2 0.1 pF LC 0.05 nH LC 0.05 nH LE 0.05 nH C_E1C2 C_C1E1 0.05 pF 0.5 pF C_E1B2 0.1 pF 0.1 pF 0.06 pF 0.06 pF UPA800T NONLINEAR MODEL EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98DATA SUBJECT TO CHANGE WITHOUT NOTICE Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.

4590 Patrick Henry Drive

Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A -AZLead (Pb) < 1000 PPM Not Detected (*) Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway t o better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.