UMY1N CEL | Alldatasheet
Document overview
- Manufacturer or author: twtysemi.com
- PDF pages: 2
Technical content
SOT-353 Plastic-Encapsulate Transistors UMY1N General purpose transistors (dual transistors)
FEATURES
z Includes a 2SA1037AK and a 2SC2412K transistor in a package z PNP and NPN transistors have common emitters z Mounting cost and area be cut in half MARKING: Y1 Equivalent circuit: Tr1 Absolute maximum ratings (T a =25℃) Symbol Parameter Limits Units V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -150 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T STG Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-50μA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA,I C =0 -6 V Collector cut-off current I CBO V CB =-60V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-6V,I C =0 -0.1 μA DC current gain h FE V CE =-6V,I C =-1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =-50mA,I B =-5mA -0.5 V Transition frequency f T V CE =-12V,I C =-2mA, f=100MHz 140 MHz Output capacitance C ob V CB =-12V,I E =0, f=1MHz 5 pF Tr Tr (3) (2) (1) (4) (5)/(6) 1 of 24008-318-123sales@twtysemi.comhttp://www.twtysemi.com Product specification
Tr2 Absolute maximum ratings (T a =25℃) Symbol Parameter Limits Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 150 mA P C Collector Dissipation 150 mW T j Junction temperature 150 ℃ T STG Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA,I C =0 7 V Collector cut-off current I CBO V CB =60V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 μA DC current gain h FE V CE =6V,I C =1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 0.4 V Transition frequency f T V CE =12V,I C =2mA, f=100MHz 180 MHz Output capacitance C ob V CB =12V,I E =0, f=1MHz 3.5 pF 2 of 24008-318-123sales@twtysemi.comhttp://www.twtysemi.com Product specification