UMG4N JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMG4N Dual Digital Transistors (NPN+NPN)

FEATURES

Two DTC114T chips in a package Marking: G4 Absolute maximum ratings (Ta=25℃) Note: 1.120mW per element not be exceeded. ELECTRICAL CHARACTERISTICS (Ta=25℃) Parameter Symbol Test c onditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50μA, I C =0 5 V Collector cut-off current I CBO V CB =50V, I E =0 500 nA Emitter cut-off current I EBO V EB =4V, I C =0 500 nA DC current transfer ration h FE V CE =5V, I C =1mA 100 250 600 Collector-emitter saturation voltage V CE(sat) I C =10mA, I B =1mA 0.3 V Transition frequency f T V CE =10V, I E =-5mA, f =100MHz 250 MHz Input resistance R 7 10 13 K Ω Symbol Parameter Value Unit V CBO Collector-base Voltage 50 V V CEO Collector-emitter Voltage 50 V V EBO Emitter-base Voltage 5 V I C Collector current 100 mA P D Power dissipation(note 1) 150 mW T J Junction temperature 150 ℃ T stg Storage temperature -55~+150 ℃ JC(T SOT-353 www.cj-elec.com 1www.cj-elec.com D,Mar,2016 Digital Transistors (Built-in Resistors)

0.1 1 10 100 100 1000 0.1 1 10 0.1 100 0.1 1 10 100 0.1 0 25 50 75 100 125 150 100 150 200 0.1 1 10 100 100 01234567 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE= 5V BASE-EMMITER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) Ta=25 T a =100 COMMON EMITTER VCE=5V I C —— V BE β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURREMT I C (mA) I C V BEsat T a =100 T a =25 AMBIENT TEMPERATURE T a ( ) POWER DISSIPATION P D (mW) P D —— T a T a =100 T a =25 β=10 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) 500 I C h FE COMMON EMITTER T a =25 Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA I B =1uA C ib C ob CAPACITANCE C T (pF) REVERSE VOLTAGE V (V) f=1MHz I C =0/I E T a =25 V CB EB C ob ib Typical Characteristics www.cj-elec.com 2www.cj-elec.com D,Mar,2016

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-353 Suggested Pad Layout www.cj-elec.com D,Mar,2016

www.cj-elec.com D,Mar,2016