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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMP SH-3 SCHOTTKY BARRIER DIODE
FEATURES
High Switching Speed Low Forward Voltage MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM P eak Repetitive Reverse Voltage 30 V IO Co ntinuous Forward Current 100 mA IFRM P eak Repetitive Forward Current 350 mA IFSM N on-repetitive Peak Forward Surge Current @ t=8.3ms 750 mA PD Pow er Dissipation 350 mW RθJA T hermal Resistance from Junction to Ambient 286 ℃/W Tj Junct ion Temperature 125 ℃ Tstg S torage Temperature -55~+150 ℃ ELE CTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Rev erse voltage V(BR) I R=100μA 30 V Rev erse current IR V R=25V 0.5 μA IF=2m A 0.33 IF=15 mA 0.45 For ward voltage VF IF=100mA 1 V Total capacitance Ctot V R=1V,f=1MHz 7 pF Reve rse recovery time trr I F= IR=10mA, Irr=0.1×IR, RL=100Ω 5 ns SOT -23 1 C,Oct,2015www.cj-elec.com MARKING: CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S
0.1 100 01 0 2 0 0.01 0.1 100 Ta=25℃ f=1M Hz Cap acitance Characteristics CAPACITANCE BETWEEN T ERMINALS CT (pF) REVERSE VOLTAG E VR (V) Pow er Derating Curve POWER DISSIPATIO N PD (mW) AMBIENT T EMPERATURE Ta ( )℃ For ward Characteristics FORW ARD VOLTAGE VF (mV) FORWARD CURRENT IF (mA) Ta=2 Ta=100 ℃ 200 Rev erse Characteristics REVERSE VOLTAG E VR (V) REVERSE CURRENT IR (uA) Ta=25 ℃ Ta=100 ℃ Typical Characteristics www.cj-elec.com 2 C,Oct,2015www.cj-elec.com
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 AJun,2014www.cj-elec.com C,Oct,2015
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Oct,2015