RB160M-40 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes RB160M-40 Schottky Barrier Diodes
FEATURES
z Small surface mounting type z Low forward voltage z High reliability MARKING: 74 Maximum Ratings and Electrical Characteristics, Single Diode @T A =25℃ Parameter Symbol Limits Unit DC reverse voltage V R 40 V Mean rectifying current I O 1 A Non-repetitive Peak Forward Surge Current @t=8.3ms I FSM 15 A Electrical Ratings @T A =25℃ Parameter Symbol Min. Ty p. Max. Unit Conditions Forward voltage V F
0.51 V IF=1A
R 30 μA V R =40V SOD-123 Junction temperature T j 125 ℃ Storage temperature T stg -55~+150 ℃ Power Dissipation PD 350 mW Thermal Resistance Junction to Ambient R θJA 200 ℃/ W 1 www.cj-elec.com The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. E,Mar,2015
0.01 0.1 01 0 2 0 3 0 4 0 1E-4 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics JUNCTION CAPACITANCE C J (pF) REVERSE VOLTAGE V R (V) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (A) T a T a =100 Reverse Characteristics REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (mA) T a =25 T a =100 Typical Characteristics www.cj-elec.com 2 E,Mar,2015
www.cj-elec.com 3 SOD-123 Suggested Pad Layout Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 D 1.500 1.700 0.059 0.067 E 2.600 2.800 0.102 0.110 E1 3.550 3.850 0.140 0.152 L L1 0.250 0.450 0.010 0.018 θ 0° 8° 0° 8° 0.500 REF 0.020 REF Symbol Dimensions In Millimeters Dimensions In Inches E,Mar,2015
www.cj-elec.com 4 E,Mar,2015 SOD-123 Tape and Reel