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TO – 92 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR (NPN)
FEATURES
z General Purpose Switch ing and Amplification. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C= 0.1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO I E=0.1mA,IC=0 4 V Collector cut-off current ICBO V CB=30V,IE=0 0.1 μA Collector cut-off current ICEO V CE=20V,IB=0 0.1 μA Emitter cut-off current IEBO V EB=3V,IC=0 0.1 μA DC current gain hFE V CE=6V, IC=1mA 40 180 Collector-emitter saturation voltage VCE(sat) I C=10mA,IB=1mA 0.3 V Base-emitter voltage VBE V CE=6V, IC=1mA 0.65 0.77 V Collector output capacitance Cob V CB=6V,IE=0, f=1MHz 1.3 pF Transition frequency fT V CE=6V,IC=1mA 400 MHz CLASSIFICATION OF hFE RANK Y GR BL RANGE 40-80 60-120 90-180 Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 0.02 A PC Collector Power Dissipation 250 mW RθJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Lay out www.cj-elec.com 2 C,Dec,2015
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